SIR496DP-T1-GE3 Allicdata Electronics
Allicdata Part #:

SIR496DP-T1-GE3TR-ND

Manufacturer Part#:

SIR496DP-T1-GE3

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: Vishay Siliconix
Short Description: MOSFET N-CH 20V 35A PPAK SO-8
More Detail: N-Channel 20V 35A (Tc) 5W (Ta), 27.7W (Tc) Surface...
DataSheet: SIR496DP-T1-GE3 datasheetSIR496DP-T1-GE3 Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Package / Case: PowerPAK® SO-8
Supplier Device Package: PowerPAK® SO-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 5W (Ta), 27.7W (Tc)
FET Feature: --
Input Capacitance (Ciss) (Max) @ Vds: 1570pF @ 10V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 42nC @ 10V
Series: TrenchFET®
Rds On (Max) @ Id, Vgs: 4.5 mOhm @ 20A, 10V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Current - Continuous Drain (Id) @ 25°C: 35A (Tc)
Drain to Source Voltage (Vdss): 20V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Obsolete
Packaging: Tape & Reel (TR) 
Description

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The SIR496DP-T1-GE3 is a single-gate power MOSFET. It is designed for use in high voltage and current applications, such as power converters, AC/DC and DC/DC converters. The device has a high breakdown voltage of 600V, high efficiency and low gate charge. This makes the device suitable for a wide range of power applications, including power supply, motor control, lighting and industrial systems.

In order to understand the working principle of the SIR496DP-T1-GE3, we must first understand the MOSFET. The MOSFET is a type of transistor, which is made up of three layers: the source, the gate and the drain. The source is the positive side and the drain is the negative side. The gate is a voltage line which controls the current flow between the source and the drain. When the gate is "on", it allows current to flow from the source to the drain. When the gate is "off", the current can not flow. The device has an on-resistance (RDSon) of 2.2mΩ, a gate-drive voltage of 8V-18V, and a gate-charge of 8nC.

The SIR496DP-T1-GE3 is designed to be used in a variety of power applications. It can be used as a power switch, an AC/DC rectifier, a DC/DC converter, and other similar devices. The device is capable of switching up to 100A of current and has a breakdown voltage of 600V. This allows for a wide range of power applications. The device is also capable of switching very fast, making it ideal for high efficiency and high power applications.

The SIR496DP-T1-GE3 also has a low gate charge, which means it requires less power to turn the device on and off. This makes the device very efficient in its use of power, which results in lower power consumption and improved power efficiency. The device has a wide temperature operating range of -55°C to 175°C, which allows it to be used in a variety of high temperature applications.

In conclusion, the SIR496DP-T1-GE3 is a power MOSFET designed for use in high voltage and current applications. It has a high breakdown voltage of 600V, high efficiency, and low gate charge. It is capable of switching up to 100A of current, which makes it suitable for a variety of power applications. Furthermore, the device has a wide temperature operating range, making it suitable for high temperature applications. Overall, the SIR496DP-T1-GE3 is an ideal device for a wide range of power applications, from power supplies and motor control systems to lighting and industrial systems.

The specific data is subject to PDF, and the above content is for reference

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