
Allicdata Part #: | SIR494DP-T1-GE3TR-ND |
Manufacturer Part#: |
SIR494DP-T1-GE3 |
Price: | $ 0.77 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Vishay Siliconix |
Short Description: | MOSFET N-CH 12V 60A PPAK SO-8 |
More Detail: | N-Channel 12V 60A (Tc) 6.25W (Ta), 104W (Tc) Surfa... |
DataSheet: | ![]() |
Quantity: | 1000 |
3000 +: | $ 0.69933 |
Vgs(th) (Max) @ Id: | 2.5V @ 250µA |
Package / Case: | PowerPAK® SO-8 |
Supplier Device Package: | PowerPAK® SO-8 |
Mounting Type: | Surface Mount |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Power Dissipation (Max): | 6.25W (Ta), 104W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 6900pF @ 6V |
Vgs (Max): | ±20V |
Gate Charge (Qg) (Max) @ Vgs: | 150nC @ 10V |
Series: | TrenchFET® |
Rds On (Max) @ Id, Vgs: | 1.2 mOhm @ 20A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 4.5V, 10V |
Current - Continuous Drain (Id) @ 25°C: | 60A (Tc) |
Drain to Source Voltage (Vdss): | 12V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Last Time Buy |
Packaging: | Tape & Reel (TR) |
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The SIR494DP-T1-GE3 is a surface-mount, N-channel power Field Effect Transistor (FET). It’s mainly used for power management applications, like switching and level-shifting. It offers superior performance compared to other FETs, such as low on-resistance and fast switching speed. The SIR494DP-T1-GE3 is one of the most popular transistors available on the market today.
The application field of the SIR494DP-T1-GE3 is quite broad. It can be used for power control, such as in battery-powered devices and LED lighting. It is also useful for switching regulated power supplies, as well as operating high frequency communication antennas. For example, the SIR494DP-T1-GE3 can be used to control the power supply to a Wifi router or a mobile phone. It is even used in electronic kiosks and vending machines.
The SIR494DP-T1-GE3 is a metal-oxide-semiconductor field-effect transistor (MOSFET) that works by controlling the amount of current that flows through it. In a MOSFET, source and drain terminals are formed from conducting media such as metal, while the gate terminal is formed from a metal oxide layer. A voltage applied to the gate terminal effectively creates an electric field in the metal oxide layer, which controls the concentration of electrons in the channel between the source and drain terminals. In turn, this affects the current flowing through the transistor.
The SIR494DP-T1-GE3 has low on-resistance, which means that it can switch between different states very quickly. It also has a fast switching speed, with the rise time and turn-on time being on the order of a few nanoseconds. This makes it ideal for applications that require fast switching speeds, such as high speed data transmission.
The SIR494DP-T1-GE3 also offers excellent thermal performance. It can handle power densities of up to 30A/cm² for a maximum of 500V. It is capable of dissipating heat effectively, with a maximum junction temperature of 175°C. This makes it suitable for use in high-temperature environments, such as automotive applications.
In summary, the SIR494DP-T1-GE3 is a single, N-Channel FET that is widely used in power management applications. It has low on-resistance and fast switching speed, as well as excellent thermal performance. It is suitable for use in a broad range of applications, from battery-powered devices to electronic kiosks and vending machines.
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