SIR462DP-T1-GE3

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The SIR462DP-T1-GE3 is a single N-channel enhancement mode field effect transistor (FET). The FET is a type of transistor used in circuit designs that allows extremely high switching speeds with low power dissipation. It is a popular choice for applications such as power conversion, motor control, and digital/analog circuits and a variety of other uses.

The SIR462DP-T1-GE3 has a gate to source (G-S) breakdown voltage of 60V, drain to source (D-S) breakdown voltage of 200V, gate to drain (G-D) voltage of 30V and drain current of 15 amps. Its gate charge (Qg) is only 10nC, making it ideal for high frequency, low power applications. It has excellent thermal management capabilities with a thermal resistance of 4 °C/W.

The SIR462DP-T1-GE3 FET is an enhancement mode device, meaning it will turn on when a voltage is applied to its gate. The device works by controlling the voltage gradient between the drains and sources. When the gate voltage is below the threshold voltage, the channel will be “off”, or no current can flow from the source to the drain. When the gate voltage is above the threshold voltage, the channel will be “on”, or current can flow from the source to the drain.

In addition to having excellent power handling capabilities, fast switching speed and low power dissipation, the SIR462DP-T1-GE3 FET also has an extremely low gate capacitance. This is important as it allows the FET to operate at much higher frequencies than its lower capacitance counterparts. The low gate capacitance also makes the SIR462DP-T1-GE3 suitable for use in high frequency RF circuits.

The low gate capacitance and fast switching speed of the SIR462DP-T1-GE3 make it the perfect choice for a variety of demanding applications. It is widely used for power conversion and motor control applications such as switched mode regulators, converters, and motor controllers. It is also well suited for digital/analog applications such as high frequency amplifiers and filters, as well as data transmission circuits.

The SIR462DP-T1-GE3 is an extremely reliable and efficient FET that can be used for a multitude of different applications. Its excellent power management capabilities, fast switching speeds and low power dissipation make it the ideal choice for switching and power regulation circuits. Its low gate capacitance also makes it well suited for high-frequency RF circuits.

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