![SIR482DP-T1-GE3 Allicdata Electronics](https://files.allicdata.com/upload/common/default.jpg)
Allicdata Part #: | SIR482DP-T1-GE3-ND |
Manufacturer Part#: |
SIR482DP-T1-GE3 |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Vishay Siliconix |
Short Description: | MOSFET N-CH 30V 35A PPAK SO-8 |
More Detail: | N-Channel 30V 35A (Tc) 5W (Ta), 27.7W (Tc) Surface... |
DataSheet: | ![]() |
Quantity: | 1000 |
1 +: | 0.00000 |
Vgs(th) (Max) @ Id: | 2.3V @ 250µA |
Package / Case: | PowerPAK® SO-8 |
Supplier Device Package: | PowerPAK® SO-8 |
Mounting Type: | Surface Mount |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Power Dissipation (Max): | 5W (Ta), 27.7W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 1575pF @ 15V |
Vgs (Max): | ±20V |
Gate Charge (Qg) (Max) @ Vgs: | 38nC @ 10V |
Series: | TrenchFET® |
Rds On (Max) @ Id, Vgs: | 5.6 mOhm @ 20A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 4.5V, 10V |
Current - Continuous Drain (Id) @ 25°C: | 35A (Tc) |
Drain to Source Voltage (Vdss): | 30V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Obsolete |
Packaging: | Tape & Reel (TR) |
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The SIR482DP-T1-GE3 is a specialized component designed to control and switch current in circuits, act as amplifiers/voltage regulators, or open/close gates with microcomputers. It is an N-channel enhancement mode Field Effect Transistor (FET) with insulated gate, found in power management, high frequency, and remote sensing applications. This component provides superior electrical properties, including low switching losses and superior ESD protection, along with a wide operating temperature range from -40°C to 150°C. The SIR482DP-T1-GE3 is an ideal component for use in both analog and digital circuits, and provides a cost effective solution for a variety of applications.
The SIR482DP-T1-GE3 has a vertical structure, with a low on resistance, and a wide drain current range. It features ultra low gate charge, low gate input capacitance, and low power loss. The component consists of a gated, vertical insulated gate structure. The gate is insulated from the body of the component, and is enabled only when enough gate voltage is provided. The component is also equipped with a large on-resistance, meaning it is capable of handling larger currents than traditional FETs.
The principle of the SIR482DP-T1-GE3 is based on the saturation of drain current, controlled by gate-source voltage. The FET will saturate when the gate-source voltage is high enough to open the channel, and drain current flows from the source to the drain. When the gate-source voltage is reduced, the channel closes and the drain current will be cut off. The voltage range an specific amount of gate-source voltage required to turn on or off the channel is defined by the devices characteristic curves, which vary depending on the size of the channel.
The SIR482DP-T1-GE3 is suitable for a variety of applications, including gate-level power switching, switching power supplies, digital power conversion, and motor control. It can also be used as an input buffer for low-noise and high speed operation, or as a noise emitter in digital systems. In addition, it is ideal for operation in DC and AC applications, such as switching of power supply current and voltage, as well as for DC to AC inverters.
The SIR482DP-T1-GE3 also provides superior ESD protection, as well as excellent current sharing and thermal performance. The component is also available in different package styles, allowing for a flow-through or sideload package type. Therefore, the SIR482DP-T1-GE3 can be easily integrated into new or existing applications, providing a reliable and cost-effective solution for power management applications.
The specific data is subject to PDF, and the above content is for reference
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