![SIR426DP-T1-GE3 Allicdata Electronics](https://files.allicdata.com/upload/common/default.jpg)
Allicdata Part #: | SIR426DP-T1-GE3TR-ND |
Manufacturer Part#: |
SIR426DP-T1-GE3 |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Vishay Siliconix |
Short Description: | MOSFET N-CH 40V 30A PPAK SO-8 |
More Detail: | N-Channel 40V 30A (Tc) 4.8W (Ta), 41.7W (Tc) Surfa... |
DataSheet: | ![]() |
Quantity: | 1000 |
Vgs(th) (Max) @ Id: | 2.5V @ 250µA |
Package / Case: | PowerPAK® SO-8 |
Supplier Device Package: | PowerPAK® SO-8 |
Mounting Type: | Surface Mount |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Power Dissipation (Max): | 4.8W (Ta), 41.7W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 1160pF @ 20V |
Vgs (Max): | ±20V |
Gate Charge (Qg) (Max) @ Vgs: | 31nC @ 10V |
Series: | TrenchFET® |
Rds On (Max) @ Id, Vgs: | 10.5 mOhm @ 15A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 4.5V, 10V |
Current - Continuous Drain (Id) @ 25°C: | 30A (Tc) |
Drain to Source Voltage (Vdss): | 40V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Active |
Packaging: | Tape & Reel (TR) |
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The SIR426DP-T1-GE3 is a single N-Channel Depletion MOSFET that is specifically designed for low-power applications, such as battery-powered or portable electronics. It is based on a designed process to provide a highly reliable, robust MOSFET. This MOSFET can handle high power pulsed load conditions as compared to conventional MOSFETs.
The basic principle of operation of the SIR426DP-T1-GE3 is similar to other depletion mode MOSFETs. In a MOSFET, the structure is composed of three layers: the source, the drain and the gate. The conduction of current between the source and the drain is controlled by the gate. A low-voltage potential applied to the gate will turn on, or activate, the MOSFET. This allows current to flow from the source to the drain.
The SIR426DP-T1-GE3 features a number of advantages as compared to other MOSFETs. Firstly, it has an improved thermal resistance, which increases its ability to dissipate heat. This improves the reliability of the device and makes it more suitable for high-power applications. Secondly, its on-resistance is lower than that of other MOSFETs, providing a low-voltage operation. Finally, its low threshold voltage makes it suitable for low-voltage, battery-powered applications.
The SIR426DP-T1-GE3 is commonly used in a variety of applications, including power supplies, wireless and motor control. Due to its low power consumption and low on-resistance, it is often used in battery-powered systems, such as portable radios, cell phones and PDAs. Its excellent thermal resistance and robust design make it well suited for motor control and high-power applications.
The SIR426DP-T1-GE3 also has a wide range of applications in the automotive industry. It is commonly used in electric vehicles and hybrid vehicles, as it is able to handle the high power demands and withstand the thermal stress. It is also used in the control of vehicle exhaust systems and the monitoring of engine parameters.
Overall, the SIR426DP-T1-GE3 is an ideal choice for low-power and high-power applications. Its low resistance and low on-resistance makes it suitable for battery-powered systems, while its excellent thermal resistance and robust design make it well suited for motor control and high-power applications. Furthermore, its low threshold voltage makes it suitable for low-voltage, battery-powered applications.
The specific data is subject to PDF, and the above content is for reference
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