SIR426DP-T1-GE3 Allicdata Electronics
Allicdata Part #:

SIR426DP-T1-GE3TR-ND

Manufacturer Part#:

SIR426DP-T1-GE3

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: Vishay Siliconix
Short Description: MOSFET N-CH 40V 30A PPAK SO-8
More Detail: N-Channel 40V 30A (Tc) 4.8W (Ta), 41.7W (Tc) Surfa...
DataSheet: SIR426DP-T1-GE3 datasheetSIR426DP-T1-GE3 Datasheet/PDF
Quantity: 1000
Stock 1000Can Ship Immediately
Specifications
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Package / Case: PowerPAK® SO-8
Supplier Device Package: PowerPAK® SO-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 4.8W (Ta), 41.7W (Tc)
FET Feature: --
Input Capacitance (Ciss) (Max) @ Vds: 1160pF @ 20V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 31nC @ 10V
Series: TrenchFET®
Rds On (Max) @ Id, Vgs: 10.5 mOhm @ 15A, 10V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
Drain to Source Voltage (Vdss): 40V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Tape & Reel (TR) 
Description

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The SIR426DP-T1-GE3 is a single N-Channel Depletion MOSFET that is specifically designed for low-power applications, such as battery-powered or portable electronics. It is based on a designed process to provide a highly reliable, robust MOSFET. This MOSFET can handle high power pulsed load conditions as compared to conventional MOSFETs.

The basic principle of operation of the SIR426DP-T1-GE3 is similar to other depletion mode MOSFETs. In a MOSFET, the structure is composed of three layers: the source, the drain and the gate. The conduction of current between the source and the drain is controlled by the gate. A low-voltage potential applied to the gate will turn on, or activate, the MOSFET. This allows current to flow from the source to the drain.

The SIR426DP-T1-GE3 features a number of advantages as compared to other MOSFETs. Firstly, it has an improved thermal resistance, which increases its ability to dissipate heat. This improves the reliability of the device and makes it more suitable for high-power applications. Secondly, its on-resistance is lower than that of other MOSFETs, providing a low-voltage operation. Finally, its low threshold voltage makes it suitable for low-voltage, battery-powered applications.

The SIR426DP-T1-GE3 is commonly used in a variety of applications, including power supplies, wireless and motor control. Due to its low power consumption and low on-resistance, it is often used in battery-powered systems, such as portable radios, cell phones and PDAs. Its excellent thermal resistance and robust design make it well suited for motor control and high-power applications.

The SIR426DP-T1-GE3 also has a wide range of applications in the automotive industry. It is commonly used in electric vehicles and hybrid vehicles, as it is able to handle the high power demands and withstand the thermal stress. It is also used in the control of vehicle exhaust systems and the monitoring of engine parameters.

Overall, the SIR426DP-T1-GE3 is an ideal choice for low-power and high-power applications. Its low resistance and low on-resistance makes it suitable for battery-powered systems, while its excellent thermal resistance and robust design make it well suited for motor control and high-power applications. Furthermore, its low threshold voltage makes it suitable for low-voltage, battery-powered applications.

The specific data is subject to PDF, and the above content is for reference

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