![SIR432DP-T1-GE3 Allicdata Electronics](https://files.allicdata.com/upload/common/default.jpg)
Allicdata Part #: | SIR432DP-T1-GE3-ND |
Manufacturer Part#: |
SIR432DP-T1-GE3 |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Vishay Siliconix |
Short Description: | MOSFET N-CH 100V 28.4A PPAK SO-8 |
More Detail: | N-Channel 100V 28.4A (Tc) 5W (Ta), 54W (Tc) Surfac... |
DataSheet: | ![]() |
Quantity: | 1000 |
Vgs(th) (Max) @ Id: | 4V @ 250µA |
Package / Case: | PowerPAK® SO-8 |
Supplier Device Package: | PowerPAK® SO-8 |
Mounting Type: | Surface Mount |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Power Dissipation (Max): | 5W (Ta), 54W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 1170pF @ 50V |
Vgs (Max): | ±20V |
Gate Charge (Qg) (Max) @ Vgs: | 32nC @ 10V |
Series: | TrenchFET® |
Rds On (Max) @ Id, Vgs: | 30.6 mOhm @ 8.6A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 7.5V, 10V |
Current - Continuous Drain (Id) @ 25°C: | 28.4A (Tc) |
Drain to Source Voltage (Vdss): | 100V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Obsolete |
Packaging: | Tape & Reel (TR) |
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The SIR432DP-T1-GE3 is a type of custom FET that is widely used across numerous industries, including consumer electronics, automotive, medical, communications, and more. It is part of a family of products manufactured by Siliconix incorporated, also known as Vishay Intertechnology. This single-device FET features low RDS(ON) of only 0.069Ω, making it suitable for high-current, high-frequency applications.
The SIR432DP-T1-GE3 has a maximum breakdown voltage of 90V, a maximum drain current of 20A, and a frequency rating of 100MHz. It is a powerful and versatile device, capable of providing exceptional performance in a wide range of applications. It has a compact size, making it ideal for use in space-constrained devices, and can operate at high frequencies, ensuring that the signal is transmitted effectively.
The SIR432DP-T1-GE3 is a n-channel enhanced power MOSFET. It is a voltage-controlled device and operates according to the principle of quantum tunneling. The operation of this device is based on the fact that, when a potential difference is applied to the Gate terminal, a potential barrier formed around the channel begins to disappear due to the quantum tunnel effect. As the potential barrier weakens, an electric current (drain) flows through the MOSFET.
Some of the key characteristics of the SIR432DP-T1-GE3 include high performance capacitance, low ON-resistance, and fast switching capability. It is also designed with ESD protection and has a maximum junction temperature of 150°C. Additionally, the SIR432DP-T1-GE3 is RoHS-compliant and Halogen-free, making it an ideal choice for applications where environmental and safety concerns are paramount.
The SIR432DP-T1-GE3 from Siliconix incorporated is a reliable, powerful, and versatile FET, offering an ideal choice for a wide range of applications, such as in the automotive, medical, communications, and consumer electronics industries, among other applications. Its low RDS(ON) and high breakdown voltage make it an attractive option for high-current, high-frequency applications and, thanks to its small size, it is suitable for applications where space is at a premium.
The SIR432DP-T1-GE3 is also designed with features such as ESD protection, high capacitance and high-frequency operation, making it a robust and reliable choice. It is RoHS-compliant and Halogen-free, ensuring a safe and sustainable solution for any application.
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