SIR410DP-T1-GE3

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The SIR410DP-T1-GE3 is a single-channel N-Channel Enhancement Mode Field-Effect Transistor (FET) offering a reliable, high performance solution for applications requiring both low on-state resistance and high continuous drain current. The device can be operated over a wide range of temperatures and provides reduced input capacitance and low gate drive power requirements.

The SIR410DP-T1-GE3 is part of a series of single-channel N-Channel Enhancement Mode FETs that combine advanced process technologies with optimized on-state resistance and power dissipation ratings. These devices have been designed to provide both reliable operation and improved performance in a wide variety of applications.

The primary application field for the SIR410DP-T1-GE3 is in low-noise, low-voltage applications such as power supply design and power management. The device is also suitable for high-bandwidth switching applications due to its high switching speed and low gate rise and fall times. Additionally, integrated circuit design may take advantage of the device’s low on-state and gate drive power requirements.

The SIR410DP-T1-GE3 utilizes an N-channel enhancement mode field effect transistor and operates as a source controlled current source or current sink. When the gate voltage is greater than the source voltage the device is in an ON state. In this mode, current flows from the drain to the source. When the gate voltage is lower than the source voltage, the device is in an OFF state, and no current flows.

The SIR410DP-T1-GE3 is designed to minimize switching times and minimize power-loss during operation. The device utilizes an advanced cell architecture to provide a reduced on-state resistance and improved power-loss ratings. Additionally, the device utilizes an extra layer of electrical insulation between the gate and source terminals to decrease total gate charge, reduce switch-node capacitance, and minimize the input current required for operations.

The SIR410DP-T1-GE3 utilizes a high-performance, low-voltage process which provides excellent temperature and voltage stability. The device can be operated over a wide range of temperatures and is available in both SOIC-8 and DFN-8 packages.

The SIR410DP-T1-GE3 is an ideal choice for applications requiring both low on-state resistance and high continuous drain current. The device offers a simplified design and improved power-loss ratings for applications where maximum current switching speed and low-voltage operation are required.

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