
Allicdata Part #: | SIR438DP-T1-GE3TR-ND |
Manufacturer Part#: |
SIR438DP-T1-GE3 |
Price: | $ 0.68 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Vishay Siliconix |
Short Description: | MOSFET N-CH 25V 60A PPAK SO-8 |
More Detail: | N-Channel 25V 60A (Tc) 5.4W (Ta), 83W (Tc) Surface... |
DataSheet: | ![]() |
Quantity: | 1000 |
1 +: | $ 0.68000 |
10 +: | $ 0.65960 |
100 +: | $ 0.64600 |
1000 +: | $ 0.63240 |
10000 +: | $ 0.61200 |
Vgs(th) (Max) @ Id: | 2.3V @ 250µA |
Package / Case: | PowerPAK® SO-8 |
Supplier Device Package: | PowerPAK® SO-8 |
Mounting Type: | Surface Mount |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Power Dissipation (Max): | 5.4W (Ta), 83W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 4560pF @ 10V |
Vgs (Max): | ±20V |
Gate Charge (Qg) (Max) @ Vgs: | 105nC @ 10V |
Series: | TrenchFET® |
Rds On (Max) @ Id, Vgs: | 1.8 mOhm @ 20A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 4.5V, 10V |
Current - Continuous Drain (Id) @ 25°C: | 60A (Tc) |
Drain to Source Voltage (Vdss): | 25V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Active |
Packaging: | Tape & Reel (TR) |
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SIR438DP-T1-GE3 (SIR438DP) is a type of the insulated gate Field-Effect Transistor (FET) device, which is a specialized type of switch that connects and disconnects electrical current and power in a circuit. It is a variation of the SIR438DP-T1-GE2 device, which features two terminals instead of the single terminal of the SIR438DP-T1-GE3. It is mainly used in the telecommunications industry to provide a fast and reliable connection between two systems.
The SIR438DP device is a static switch, which means that it has no moving parts, and can be used for both connecting and disconnecting. It is packaged in a standard SOT-563 package, with an extra terminal at the back. This helps to reduce the device’s size, making it easier to handle and mount on circuit boards.
The SIR438DP is a solid-state device, which means that it operates by controlling the flow of electrons between the gate and the source and drain electrodes, rather than with an applied voltage or current. This makes it much faster and more reliable than traditional mechanical switches.
The SIR438DP is a single-electron transistor, as opposed to a dual-electron transistor (DET) or a three-electron transistor (TET). This means that it is composed of one semiconductor material, instead of two or three. This makes it an ideal choice for high-speed applications, due to its fast switching performance and low power dissipation.
The SIR438DP is also a Metal Oxide Semiconductor Field-Effect Transistor (MOSFET). A MOSFET is a type of electronic component that is composed of a substrate, one or more metal oxide layers, and a metal gate. This type of transistor is used for controlling the operation of a circuit, such as the voltage or current that is supplied to it. By controlling the voltage or current, the device can selectively switch on or off different components in the circuit.
The working principle of the SIR438DP-T1-GE3 is based on the ability of the metal gate to induce an electric field across the device when a voltage is applied to the gate. This field attracts electrons towards the gate, thus allowing current to flow between the source and the drain. This makes the device an excellent choice for controlling a variety of currents in a circuit that require high accuracy and high speed.
The SIR438DP-T1-GE3 is used in various applications, including telecommunications, automotive, and medical device systems. It is especially useful in telecommunications and automotive applications, as it provides the necessary high speed, accuracy and reliability needed to ensure their smooth operation. Additionally, the device has a low power dissipation, making it an ideal choice for energy-efficient applications.
In conclusion, the SIR438DP-T1-GE3 is a type of insulated gate Field-Effect Transistor (FET) device that is used for connecting and disconnecting electrical current and power in a circuit. It is a single-electron transistor, and a Metal Oxide Semiconductor Field-Effect Transistor (MOSFET), which helps to reduce its size and power dissipation. The device is mainly used in telecommunications and automotive systems, as it is fast and reliable and provides high accuracy and high speed. It is an ideal choice for these types of applications.
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