SIR438DP-T1-GE3 Allicdata Electronics
Allicdata Part #:

SIR438DP-T1-GE3TR-ND

Manufacturer Part#:

SIR438DP-T1-GE3

Price: $ 0.68
Product Category:

Discrete Semiconductor Products

Manufacturer: Vishay Siliconix
Short Description: MOSFET N-CH 25V 60A PPAK SO-8
More Detail: N-Channel 25V 60A (Tc) 5.4W (Ta), 83W (Tc) Surface...
DataSheet: SIR438DP-T1-GE3 datasheetSIR438DP-T1-GE3 Datasheet/PDF
Quantity: 1000
1 +: $ 0.68000
10 +: $ 0.65960
100 +: $ 0.64600
1000 +: $ 0.63240
10000 +: $ 0.61200
Stock 1000Can Ship Immediately
$ 0.68
Specifications
Vgs(th) (Max) @ Id: 2.3V @ 250µA
Package / Case: PowerPAK® SO-8
Supplier Device Package: PowerPAK® SO-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 5.4W (Ta), 83W (Tc)
FET Feature: --
Input Capacitance (Ciss) (Max) @ Vds: 4560pF @ 10V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 105nC @ 10V
Series: TrenchFET®
Rds On (Max) @ Id, Vgs: 1.8 mOhm @ 20A, 10V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Current - Continuous Drain (Id) @ 25°C: 60A (Tc)
Drain to Source Voltage (Vdss): 25V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Tape & Reel (TR) 
Description

Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us:   sales@allicdata.com

SIR438DP-T1-GE3 (SIR438DP) is a type of the insulated gate Field-Effect Transistor (FET) device, which is a specialized type of switch that connects and disconnects electrical current and power in a circuit. It is a variation of the SIR438DP-T1-GE2 device, which features two terminals instead of the single terminal of the SIR438DP-T1-GE3. It is mainly used in the telecommunications industry to provide a fast and reliable connection between two systems.

The SIR438DP device is a static switch, which means that it has no moving parts, and can be used for both connecting and disconnecting. It is packaged in a standard SOT-563 package, with an extra terminal at the back. This helps to reduce the device’s size, making it easier to handle and mount on circuit boards.

The SIR438DP is a solid-state device, which means that it operates by controlling the flow of electrons between the gate and the source and drain electrodes, rather than with an applied voltage or current. This makes it much faster and more reliable than traditional mechanical switches.

The SIR438DP is a single-electron transistor, as opposed to a dual-electron transistor (DET) or a three-electron transistor (TET). This means that it is composed of one semiconductor material, instead of two or three. This makes it an ideal choice for high-speed applications, due to its fast switching performance and low power dissipation.

The SIR438DP is also a Metal Oxide Semiconductor Field-Effect Transistor (MOSFET). A MOSFET is a type of electronic component that is composed of a substrate, one or more metal oxide layers, and a metal gate. This type of transistor is used for controlling the operation of a circuit, such as the voltage or current that is supplied to it. By controlling the voltage or current, the device can selectively switch on or off different components in the circuit.

The working principle of the SIR438DP-T1-GE3 is based on the ability of the metal gate to induce an electric field across the device when a voltage is applied to the gate. This field attracts electrons towards the gate, thus allowing current to flow between the source and the drain. This makes the device an excellent choice for controlling a variety of currents in a circuit that require high accuracy and high speed.

The SIR438DP-T1-GE3 is used in various applications, including telecommunications, automotive, and medical device systems. It is especially useful in telecommunications and automotive applications, as it provides the necessary high speed, accuracy and reliability needed to ensure their smooth operation. Additionally, the device has a low power dissipation, making it an ideal choice for energy-efficient applications.

In conclusion, the SIR438DP-T1-GE3 is a type of insulated gate Field-Effect Transistor (FET) device that is used for connecting and disconnecting electrical current and power in a circuit. It is a single-electron transistor, and a Metal Oxide Semiconductor Field-Effect Transistor (MOSFET), which helps to reduce its size and power dissipation. The device is mainly used in telecommunications and automotive systems, as it is fast and reliable and provides high accuracy and high speed. It is an ideal choice for these types of applications.

The specific data is subject to PDF, and the above content is for reference

Related Products
Search Part number : "SIR4" Included word is 34
Part Number Manufacturer Price Quantity Description
SIR403EDP-T1-GE3 Vishay Silic... -- 1000 MOSFET P-CH 30V 40A PPAK ...
SIR406DP-T1-GE3 Vishay Silic... -- 1000 MOSFET N-CH 25V 40A PPAK ...
SIR422DP-T1-GE3 Vishay Silic... -- 1000 MOSFET N-CH 40V 40A PPAK ...
SIR466DP-T1-GE3 Vishay Silic... -- 3000 MOSFET N-CH 30V 40A PPAK ...
SIR474DP-T1-GE3 Vishay Silic... -- 1000 MOSFET N-CH 30V 20A PPAK ...
SIR474DP-T1-RE3 Vishay Silic... 0.27 $ 1000 MOSFET N-CH 30V 20A POWER...
SIR404DP-T1-GE3 Vishay Silic... -- 6000 MOSFET N-CH 20V 60A PPAK ...
SIR402DP-T1-GE3 Vishay Silic... -- 1000 MOSFET N-CH 30V 35A PPAK ...
SIR472ADP-T1-GE3 Vishay Silic... -- 1000 MOSFET N-CH 30V 18A PPAK ...
SIR410DP-T1-GE3 Vishay Silic... -- 18000 MOSFET N-CH 20V 35A PPAK ...
SIR416DP-T1-GE3 Vishay Silic... -- 1000 MOSFET N-CH 40V 50A PPAK ...
SIR462DP-T1-GE3 Vishay Silic... -- 12000 MOSFET N-CH 30V 30A PPAK ...
SIR418DP-T1-GE3 Vishay Silic... -- 1000 MOSFET N-CH 40V 40A PPAK ...
SIR476DP-T1-GE3 Vishay Silic... 0.69 $ 1000 MOSFET N-CH 25V 60A PPAK ...
SIR436DP-T1-GE3 Vishay Silic... -- 1000 MOSFET N-CH 25V 40A PPAK ...
SIR438DP-T1-GE3 Vishay Silic... -- 1000 MOSFET N-CH 25V 60A PPAK ...
SIR460DP-T1-GE3 Vishay Silic... -- 1000 MOSFET N-CH 30V 40A PPAK ...
SIR496DP-T1-GE3 Vishay Silic... 0.0 $ 1000 MOSFET N-CH 20V 35A PPAK ...
SIR432DP-T1-GE3 Vishay Silic... -- 1000 MOSFET N-CH 100V 28.4A PP...
SIR414DP-T1-GE3 Vishay Silic... -- 1000 MOSFET N-CH 40V 50A PPAK ...
SIR484DP-T1-GE3 Vishay Silic... -- 1000 MOSFET N-CH 20V 20A PPAK ...
SIR401DP-T1-GE3 Vishay Silic... -- 3000 MOSFET P-CH 20V 50A PPAK ...
SIR426DP-T1-GE3 Vishay Silic... -- 1000 MOSFET N-CH 40V 30A PPAK ...
SIR440DP-T1-GE3 Vishay Silic... -- 1000 MOSFET N-CH 20V 60A PPAK ...
SIR494DP-T1-GE3 Vishay Silic... 0.77 $ 1000 MOSFET N-CH 12V 60A PPAK ...
SIR492DP-T1-GE3 Vishay Silic... -- 3000 MOSFET N-CH 12V 40A PPAK ...
SIR468DP-T1-GE3 Vishay Silic... -- 15000 MOSFET N-CH 30V 40A PPAK ...
SIR472DP-T1-GE3 Vishay Silic... -- 1000 MOSFET N-CH 30V 20A PPAK ...
SIR482DP-T1-GE3 Vishay Silic... 0.0 $ 1000 MOSFET N-CH 30V 35A PPAK ...
SIR464DP-T1-GE3 Vishay Silic... -- 1000 MOSFET N-CH 30V 50A PPAK ...
SIR424DP-T1-GE3 Vishay Silic... -- 1000 MOSFET N-CH 20V 30A PPAK ...
SIR412DP-T1-GE3 Vishay Silic... -- 1000 MOSFET N-CH 25V 20A PPAK ...
SIR408DP-T1-GE3 Vishay Silic... -- 1000 MOSFET N-CH 25V 50A PPAK ...
SIR470DP-T1-GE3 Vishay Silic... -- 3000 MOSFET N-CH 40V 60A PPAK ...
Latest Products
IRFL31N20D

MOSFET N-CH 200V 31A D2PAKN-Channel 200V...

IRFL31N20D Allicdata Electronics
IXTT440N055T2

MOSFET N-CH 55V 440A TO-268N-Channel 55V...

IXTT440N055T2 Allicdata Electronics
IXTH14N80

MOSFET N-CH 800V 14A TO-247N-Channel 800...

IXTH14N80 Allicdata Electronics
IXFT23N60Q

MOSFET N-CH 600V 23A TO-268(D3)N-Channel...

IXFT23N60Q Allicdata Electronics
IXTT72N20

MOSFET N-CH 200V 72A TO-268N-Channel 200...

IXTT72N20 Allicdata Electronics
IXFT9N80Q

MOSFET N-CH 800V 9A TO-268N-Channel 800V...

IXFT9N80Q Allicdata Electronics