SIR412DP-T1-GE3

Vgs(th) (Max) @ Id:	2.5V @ 250µA
Package / Case:	PowerPAK® SO-8
Supplier Device Package:	PowerPAK® SO-8
Mounting Type:	Surface Mount
Operating Temperature:	-55°C ~ 150°C (TJ)
Power Dissipation (Max):	3.9W (Ta), 15.6W (Tc)
FET Feature:	--
Input Capacitance (Ciss) (Max) @ Vds:	600pF @ 10V
Vgs (Max):	±20V
Gate Charge (Qg) (Max) @ Vgs:	16nC @ 10V
Series:	TrenchFET®
Rds On (Max) @ Id, Vgs:	12 mOhm @ 10A, 10V
Drive Voltage (Max Rds On, Min Rds On):	4.5V, 10V
Current - Continuous Drain (Id) @ 25°C:	20A (Tc)
Drain to Source Voltage (Vdss):	25V
Technology:	MOSFET (Metal Oxide)
FET Type:	N-Channel
Part Status:	Active
Packaging:	Tape & Reel (TR)

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SIR412DP-T1-GE3 Application Field and Working Principle

The SIR412DP-T1-GE3 is a N-Channel, Metal-Oxide Semiconductor Field Effect Transistor (MOSFET) designed for power switching applications. It is designed to provide superior performance and reliability in high-temperature, harsh environment applications such as solar power systems, automotive power systems, inverters, and motor control. The SIR412DP-T1-GE3 has an extended high-temperature operating range and high peak current and surge capacity, making it suitable for high-temperature, high-power switching applications.

MOSFET Basics

A MOSFET is an electrostatic device that controls the flow of electrons between the source and the drain of a channel. The channel width and length determine the resistance of the channel and the amount of current that can be allowed to flow between the source and the drain of the channel. A MOSFET is also referred to as a "metal oxide field effect transistor" (MOSFET). The most common type of MOSFET is the N-Channel MOSFET, which has a control gate, source and drain electrode, and substrate.The N-Channel MOSFET is used to regulate the flow of electrons on a channel. The control gate is used to control the voltage and current of the channel. The source and drain are electrodes that are connected to a power source. The substrate creates the channel between the source and the drain and is made of a material that has a high resistance to electricity.Once the voltage and current is applied to the control gate of the MOSFET, it will allow the electrons to flow from the source to the drain. This process is called channel current. The channel current is proportional to the voltage applied to the control gate. The N-Channel MOSFET is a unilateral semiconductor device that has the characteristic of only allowing electrons to flow from the source to the drain, not from the drain to the source. This type of MOSFET is referred to as a unipolar or depletion-mode device. Depletion-mode devices are used in applications where the ability to replicate digital signals is important.

SIR412DP-T1-GE3 Specifications

The SIR412DP-T1-GE3 is a depletion-mode N-channel MOSFET that is designed for high-frequency, high-efficiency applications. It has a maximum RDS(on) of 0.10 Ohms, a maximum drain-source voltage of 100V, and a maximum drain current of 8A. The SIR412DP-T1-GE3 has an operating temperature range of -55°C to +125°C and a power dissipation of 1.93W.The SIR412DP-T1-GE3 is designed for high-current switching applications, such as power converters, inverters, and motor controllers. It has a low on-resistance, which makes it suitable for high-speed switching. The SIR412DP-T1-GE3 also has an extended high-temperature operating range, which makes it suitable for harsh environment applications.

SIR412DP-T1-GE3 Working Principle

The SIR412DP-T1-GE3 MOSFET is a depletion-mode device and requires a negative voltage at the gate in order to turn the device on. When the gate voltage is between 0V and -5V, the device will be off regardless of the drain current. At -5V and above, the device will be on and the drain current will be proportional to the magnitude of the gate voltage.The SIR412DP-T1-GE3 features a symmetrical body design to ensure fast switching speed and reduce switching losses. The on-resistance is also improved by the use of an optimized body contact in the device structure. The foot print of the SIR412DP-T1-GE3 is optimized to reduce mounting-related losses.

Conclusion

The SIR412DP-T1-GE3 is a N-Channel, Metal-Oxide Semiconductor Field Effect Transistor (MOSFET) designed for power switching applications. It is designed for high-current switching applications and has an extended high-temperature operating range. The SIR412DP-T1-GE3 has a low on-resistance and a symmetrical body design to ensure fast switching speed and reduce switching losses.

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