SIR476DP-T1-GE3

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The SIR476DP-T1-GE3 is a new generation metal oxide semiconductor field-effect transistor (MOSFET), manufactured and sold by Infineon Technologies. The SIR476DP-T1-GE3 is a surface mount single N-channel enhancement mode power MOSFET, suitable for a wide range of applications. This device is designed to provide superior power dissipation and low gate-source charge compared to traditional power MOSFETs.

The SIR476DP-T1-GE3 is a single N-channel enhancement mode power MOSFET featuring low RDS(on), low gate-charge, excellent thermal performance, and good switching performance. The exceptionally low on-state resistance, combined with a low gate-charge and fast switching response, makes it ideal for use in a wide range of applications, including DC-DC converters, power-factor correction, switch-mode power supplies, and battery charging. This device is particularly well-suited for high-efficiency and high-current applications such as server, network, and telecommunication applications.

The SIR476DP-T1-GE3 has a VDS (drain to source) of 30V, a ID (continuous current) of 0.6A and a RDS(ON) (drain to source on-resistance) of 0.07 ohms. The device is a true improvement over traditional MOSFETs in terms of power efficiency, as it offers a significantly lower gate-source charge, which is directly proportional to the power dissipation. The device also features an improved fast-switching capability, making it ideal for high-frequency switching applications.

The main working principle of the SIR476DP-T1-GE3 is based on the Gate-Source voltage VGS. By applying the correct Gate-Source voltage, the Drain-Source voltage VDS is allowed to flow, which in turn controls the drain-source current linear up to the limit of the device\'s current rating. The device is designed to be used in an enhancement mode configuration with the gate floating, which means the drain-source current will only flow if the gate voltage is raised above the threshold voltage.

The SIR476DP-T1-GE3 is the perfect solution for many power efficiency applications, as it offers better power dissipation and a lower gate-charge than traditional power MOSFETs. The device is designed to work in harsh environments, which makes it suitable for applications that require long-term stability and reliable performance. The device can operate in temperatures up to 150°C, and the exceptional low gate-charge and switching performance is sure to improve the efficiency of any system it is used in.

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