SIR470DP-T1-GE3

Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us:   sales@allicdata.com

Introduction

The SIR470DP-T1-GE3 is a high performance power MOSFET device, featuring improved switching and breakdown capabilities. It is ideal for applications requiring wide-voltage range and high current rating. This device is constructed from a single N-channel MOSFET, which is available in a 4.0 Volt to 18 Volt voltage range and delivers current ratings up to 10 Amps with acceptable output and switching performance. The SIR470DP-T1-GE3 offers superior performance and is a suitable choice for power MOSFET devices for a range of applications.

Applications

The SIR470DP-T1-GE3 is well suited for use in a variety of high power applications. These include DC/DC converters, switching power supply designs, motor control circuits, high speed switching circuits, battery chargers, and automotive applications. The device is also suitable for high frequency switching circuits, such as PFC and AC/DC converters.The wide voltage and current rating of the SIR470DP-T1-GE3 makes it ideal for use in a variety of power applications, including industrial, automotive, communications, computer, and automotive applications.

Benefits

The SIR470DP-T1-GE3 offers several benefits to its users. The device is capable of delivering current ratings up to 10 Amps with a wide voltage range of 4.0V to 18V. This makes it suitable for a variety of power applications. In addition, it has an enhanced switching performance, as well as improved breakdown voltage ratings. This feature allows the device to handle a wide range of power requirements. Furthermore, it is capable of operating at high switching frequencies and is rated to a maximum CE junction temperature rating of 175 °C.

Working Principle

The SIR470DP-T1-GE3 is a N-channel MOSFET device. It operates on the principle of majority carrier controlled current industry, in which the current flows from the drain to the source when the gate voltage exceeds the threshold voltage. The device is constructed from multiple layers of polycrystalline silicon, with a gate oxide layer, a drain and source region, and an ohmic contact. The operation of the device is based on the principle of a charge transfer device, in which the gate voltage applied causes the carriers (electrons or holes) to be accelerated in their respective channel regions. This channel region is surrounded by the gate oxide, which prevents the carriers from flowing in the wrong direction. As a result, a voltage applied to the gate of the device creates an inversion layer, which allows a current to flow from the drain to the source. The MOSFET device is capable of switching rapidly and can be used as an active component in a variety of high power applications.

Conclusion

The SIR470DP-T1-GE3 is a highly versatile power MOSFET device that is suitable for a variety of applications requiring a wide-voltage range and high current ratings. It offers improved switching and breakdown capabilities, and is designed for use in DC/DC converters, switching power supply designs, motor control circuits, battery chargers, and automotive applications. The device operates by transferring charge carriers from the source to the drain, and is capable of high frequency switching and rated to a maximum CE junction temperature rating of 175°C.

The specific data is subject to PDF, and the above content is for reference