SPP02N60C3HKSA1

The SPP02N60C3HKSA1 is a small signal N-channel enhancement mode Field Effect Transistor (FET) with a high side source and an insulated source. It belongs to the Single type of FETs, MOSFETs family and is created for power switch or switch-mode applications. The SPP02N60C3HKSA1 is offered in a TO-225AA package that aids great power dissipation and increased thermal integrity.

Application Field

In its standard configuration, this power MOSFET is ideal for use in many different power switching applications such as DC motor control, voltage regulation and light control. It is intended for power switch applications that require high voltage range, high conductance, low gate charge and fast switching of current. SPP02N60C3HKSA1 is a popular choice in applications where a high-side power switch is needed, such as switching in the reverse direction.

Working Principle

The SPP02N60C3HKSA1 is made of three separate layers. The source and drain electrodes are made of copper-doped polysilicon material, and the substrate layer is p-type semiconductor material. The device operates as a power switch by transferring energy from the source to the drain. The electrical charge from the source flows through the device and is blocked at the drain by the p-type substrate material. This creates a diode like flow of electrons between the two layers. The fifth layer, a thin layer of oxide, serves as a gate that controls the electron flow. By applying a voltage to the gate, the oxide absorbs electrons and reduces the current flow between the two layers.

The SPP02N60C3HKSA1 is also equipped with an insulated gate source terminal (IGST) that allows for a fast response time and excellent thermal performance. The IGST senses the gate voltage level and behaves like a diode to limit the gate-source voltage. This ensures the switch performs optimally at different temperatures and that it is not easily damaged when exposed to rapid changes in temperature.

The SPP02N60C3HKSA1 is capable of supporting a wide range of voltages and current ranging from 20V to 200V and up to 5A. It has an on-resistance of only 0.2 Ohms and an off-resistance of 5 Ohms, making it an ideal choice for power switching applications.

Conclusion

The SPP02N60C3HKSA1 MOSFET is a small signal N-channel enhancement mode FET suitable for power switch and switch-mode applications. It is designed to provide high voltage range, high conductance and a fast switching of current. The device offers excellent thermal and voltage characteristics with a fast response time. It is capable of supporting a large range of voltages and currents and offers up to 5A of current and an on-resistance of 0.2 Ohms.