SPP07N60S5HKSA1 Allicdata Electronics
Allicdata Part #:

SPP07N60S5HKSA1-ND

Manufacturer Part#:

SPP07N60S5HKSA1

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: Infineon Technologies
Short Description: LOW POWER_LEGACY
More Detail:
DataSheet: SPP07N60S5HKSA1 datasheetSPP07N60S5HKSA1 Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Series: *
Part Status: Obsolete
Description

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The SPP07N60S5HKSA1 is a 600-volt, 7A N-channel insulated-gate field-effect transistor (IGFET or MOSFET) made of silicon. The device is based on an advanced power MOSFET technology, which has been tailored to make compact, low-cost, thermally-efficient and low-noise barriers. MOSFETs are three-terminal semiconductor devices consisting of a gate, an source, and a drain. They are heavily used in both analog and digital circuits for power supply and signal switching applications.The SPP07N60S5HKSA1 can handle up to 7 amps of current and switches with a gate voltage of 5V. It features low on-resistance, allowing for better current flow, allowing for higher efficiency and delivering higher power output. It also has a low threshold voltage, allowing for more efficient operation at low voltages. Additionally, the device has a high drain-to-source breakdown voltage, which allows it to switch high-voltage applications with minimal power consumption.The SPP07N60S5HKSA1 can be used in a wide range of applications, including motor control, renewable energy, power supply management, DC/DC and AC/DC converters, motor control, power electronics, automotive, avionic, and robotic systems. The device is also suitable for use in signal processing systems, such as audiovisual, telecommunications, and industrial signal conditioning.The working principle of the SPP07N60S5HKSA1 is based on the field-effect principle, which states that, when a voltage is applied to the gate of the MOSFET, it creates an electric field, which causes a conducting channel to form between the source and the drain. The amount of current that flows through the channel is determined by the size of the voltage applied to the gate. If the voltage is increased, the current also increases.

The SPP07N60S5HKSA1 is an ideal MOSFET for a number of high-current, high-voltage applications, due to its low on-resistance and high breakdown voltage. Additionally, its low threshold voltage and its low power consumption makes it ideal for low-voltage applications. These features give designers the flexibility to use it for a variety of applications, from motor controls to signal processing.

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