Allicdata Part #: | SPP07N60S5HKSA1-ND |
Manufacturer Part#: |
SPP07N60S5HKSA1 |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Infineon Technologies |
Short Description: | LOW POWER_LEGACY |
More Detail: | |
DataSheet: | SPP07N60S5HKSA1 Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Series: | * |
Part Status: | Obsolete |
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The SPP07N60S5HKSA1 is a 600-volt, 7A N-channel insulated-gate field-effect transistor (IGFET or MOSFET) made of silicon. The device is based on an advanced power MOSFET technology, which has been tailored to make compact, low-cost, thermally-efficient and low-noise barriers. MOSFETs are three-terminal semiconductor devices consisting of a gate, an source, and a drain. They are heavily used in both analog and digital circuits for power supply and signal switching applications.The SPP07N60S5HKSA1 can handle up to 7 amps of current and switches with a gate voltage of 5V. It features low on-resistance, allowing for better current flow, allowing for higher efficiency and delivering higher power output. It also has a low threshold voltage, allowing for more efficient operation at low voltages. Additionally, the device has a high drain-to-source breakdown voltage, which allows it to switch high-voltage applications with minimal power consumption.The SPP07N60S5HKSA1 can be used in a wide range of applications, including motor control, renewable energy, power supply management, DC/DC and AC/DC converters, motor control, power electronics, automotive, avionic, and robotic systems. The device is also suitable for use in signal processing systems, such as audiovisual, telecommunications, and industrial signal conditioning.The working principle of the SPP07N60S5HKSA1 is based on the field-effect principle, which states that, when a voltage is applied to the gate of the MOSFET, it creates an electric field, which causes a conducting channel to form between the source and the drain. The amount of current that flows through the channel is determined by the size of the voltage applied to the gate. If the voltage is increased, the current also increases.
The SPP07N60S5HKSA1 is an ideal MOSFET for a number of high-current, high-voltage applications, due to its low on-resistance and high breakdown voltage. Additionally, its low threshold voltage and its low power consumption makes it ideal for low-voltage applications. These features give designers the flexibility to use it for a variety of applications, from motor controls to signal processing.
The specific data is subject to PDF, and the above content is for reference
Part Number | Manufacturer | Price | Quantity | Description |
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SPP04N80C3XKSA1 | Infineon Tec... | 1.34 $ | 1000 | MOSFET N-CH 800V 4A TO-22... |
SPP06N80C3XKSA1 | Infineon Tec... | 1.51 $ | 1000 | MOSFET N-CH 800V 6A TO-22... |
SPP08N80C3XKSA1 | Infineon Tec... | 1.79 $ | 328 | MOSFET N-CH 800V 8A TO-22... |
SPP03N60S5HKSA1 | Infineon Tec... | 0.0 $ | 1000 | MOSFET N-CH 600V 3.2A TO-... |
SPP07N60S5 | Infineon Tec... | -- | 1000 | MOSFET N-CH 650V 7.3A TO-... |
SPP08P06PBKSA1 | Infineon Tec... | 0.0 $ | 1000 | MOSFET P-CH 60V 8.8A TO-2... |
SPP04N50C3HKSA1 | Infineon Tec... | 0.0 $ | 1000 | MOSFET N-CH 560V 4.5A TO-... |
SPP02N60C3HKSA1 | Infineon Tec... | 0.0 $ | 1000 | MOSFET N-CH 650V 1.8A TO-... |
SPP03N60C3HKSA1 | Infineon Tec... | 0.0 $ | 1000 | MOSFET N-CH 650V 3.2A TO-... |
SPP04N60C3HKSA1 | Infineon Tec... | 0.0 $ | 1000 | MOSFET N-CH 650V 4.5A TO-... |
SPP07N60CFDHKSA1 | Infineon Tec... | 0.0 $ | 1000 | MOSFET N-CH 650V 6.6A TO-... |
SPP07N60C3HKSA1 | Infineon Tec... | 0.0 $ | 1000 | MOSFET N-CH 650V TO-220AB... |
SPP04N80C3XK | Infineon Tec... | 0.0 $ | 1000 | MOSFET N-CH 800V 4A TO-22... |
SPP06N80C3XK | Infineon Tec... | 0.0 $ | 1000 | MOSFET N-CH 800V 6A TO-22... |
SPP08N80C3XK | Infineon Tec... | 0.0 $ | 1000 | MOSFET N-CH 800V 8A TO-22... |
SPP07N60C3XKSA1 | Infineon Tec... | 1.86 $ | 455 | MOSFET N-CH 650V 7.3A TO-... |
SPP02N60S5HKSA1 | Infineon Tec... | 0.0 $ | 1000 | MOSFET N-CH 600V 1.8A TO-... |
SPP04N60S5BKSA1 | Infineon Tec... | 0.0 $ | 1000 | MOSFET N-CH 600V 4.5A TO-... |
SPP07N65C3HKSA1 | Infineon Tec... | 0.0 $ | 1000 | MOSFET N-CH 650V 7.3A TO-... |
SPP08P06PHXKSA1 | Infineon Tec... | 0.78 $ | 388 | MOSFET P-CH 60V 8.8A TO-2... |
SPP03N60C3XKSA1 | Infineon Tec... | 0.0 $ | 1000 | LOW POWER_LEGACY |
SPP04N50C3XKSA1 | Infineon Tec... | 0.7 $ | 1000 | LOW POWER_LEGACY |
SPP03N60S5XKSA1 | Infineon Tec... | 0.0 $ | 1000 | LOW POWER_LEGACY |
SPP08N50C3XKSA1 | Infineon Tec... | 0.0 $ | 1000 | MOSFET N-CH 560V 7.6A TO-... |
SPP02N60C3XKSA1 | Infineon Tec... | 0.0 $ | 1000 | LOW POWER_LEGACY |
SPP02N80C3XKSA1 | Infineon Tec... | 0.93 $ | 25 | MOSFET N-CH 800V 2A TO-22... |
SPP06N60C3XKSA1 | Infineon Tec... | 0.0 $ | 1000 | LOW POWER_LEGACY |
SPP07N60S5HKSA1 | Infineon Tec... | 0.0 $ | 1000 | LOW POWER_LEGACY |
SPP07N60S5XKSA1 | Infineon Tec... | 1.22 $ | 1000 | LOW POWER_LEGACY |
SPP07N65C3XKSA1 | Infineon Tec... | 0.0 $ | 1000 | LOW POWER_LEGACY |
SPP04N60C3XKSA1 | Infineon Tec... | 1.35 $ | 1000 | MOSFET N-CH 600V 4.5A TO-... |
SPP06N60C3HKSA1 | Infineon Tec... | 1.48 $ | 3 | MOSFET N-CH 650V 6.2A TO-... |
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