Allicdata Part #: | SPP08P06PBKSA1-ND |
Manufacturer Part#: |
SPP08P06PBKSA1 |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Infineon Technologies |
Short Description: | MOSFET P-CH 60V 8.8A TO-220AB |
More Detail: | P-Channel 60V 8.8A (Tc) 42W (Tc) Through Hole PG-T... |
DataSheet: | SPP08P06PBKSA1 Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Vgs(th) (Max) @ Id: | 4V @ 250µA |
Package / Case: | TO-220-3 |
Supplier Device Package: | PG-TO-220-3 |
Mounting Type: | Through Hole |
Operating Temperature: | -55°C ~ 175°C (TJ) |
Power Dissipation (Max): | 42W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 420pF @ 25V |
Vgs (Max): | ±20V |
Gate Charge (Qg) (Max) @ Vgs: | 15nC @ 10V |
Series: | SIPMOS® |
Rds On (Max) @ Id, Vgs: | 300 mOhm @ 6.2A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 10V |
Current - Continuous Drain (Id) @ 25°C: | 8.8A (Tc) |
Drain to Source Voltage (Vdss): | 60V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | P-Channel |
Part Status: | Obsolete |
Packaging: | Tube |
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The acronym SPP08P06PBKSA1 stands for a three-terminal device used for power applications. This particular device is a type of field effect transistor (FET) called a metal oxide semiconductor field effect transistor (MOSFET). This MOSFET is a single-channel junction-gate device, meaning it has one channel (metal channel) through which current can pass.
A MOSFET is typically composed of two parts: the insulated gate and the semiconductor channel. The insulated gate is made up of two layers of polymeric dielectric material, the dielectric and the gate oxide. The insulated gate provides a barrier between the semiconductor channel and the environment, protecting it from potentially damaging particulate contaminants. The semiconductor channel is made of gate oxide, silicon and other materials that determine how it behaves.
The SPP08P06PBKSA1 is unique in its ability to provide very low on-resistance. This makes it ideal for use in applications that require high current handling capabilities and superior thermal management. It also offers excellent performance in terms of signal processing, low power consumption and low capacitance. These features make the SPP08P06PBKSA1 particularly well suited for power converters, motor drives, high frequency power conversion and other power-related applications.
The working principle behind the SPP08P06PBKSA1 is based on the use of an electrostatic field between two insulated gates. When a voltage is applied between the two gates, an electric field is generated. This electric field creates a current in the channel, effectively controlling the flow of current through the device. The device can be used as a switch to control the flow of current, or as an amplifier to increase the current.
The SPP08P06PBKSA1 is a sophisticated device that exhibits superior performance compared to other types of FETs. It provides superior thermal management and high current handling capabilities. Furthermore, its low capacitance and signal processing capabilities make it ideal for low power applications. Despite its advanced nature, this device is relatively simple to use and is readily available to engineers and product designers at a reasonable cost.
The specific data is subject to PDF, and the above content is for reference
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