SPP04N60C3XKSA1

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The SPP04N60C3XKSA1 is a N-channel enhancement mode MOSFET with a high-performance planar structure. It is commonly used in circuit designs such as general purpose power applications, smart power switches, and power management. In its standard format, It typically has a drain-source breakdown voltage of 600 volts, a drain current of 15 amps and an on-state resistance of 4.5 ohms.

Features

The SPP04N60C3XKSA1 features a maximum operating temperature of 125 degrees Celsius, an Rds (on) of 115 milliohms, a package type of TO252-3 and gates capacitance of 25pF. It has a very low gate threshold voltage and low gate charge, making it ideal for power management designs such as switch mode power supplies, motor drivers and phase-shifted full bridge circuits. Additionally, its low on-resistance makes it suitable for high current applications.

Application Field and Working Principle

The SPP04N60C3XKSA1 is a deep submicron power MOSFET device used in power switching applications such as general purpose power switches, phase-shifted full bridge circuits and SMPS. The device incorporates a planar double-diffused MOSFET structure which brings a high-speed switching capability and improved avalanche characteristics. It is designed to withstand high voltage transients and has a high-thermal stability.

The SPP04N60C3XKSA1 works in enhancement mode, meaning that the device is normally in an off state and turns on when a sufficient gate-source voltage is applied. When the gate-source voltage is negative with respect to the source, the MOSFET is off and no drain current flows. As the gate-source voltage increases, the drain current flows and the MOSFET will remain in the on-state as long as the gate-source voltage is larger than the threshold voltage.

In addition to being applied as a common switch in general purpose power switching applications, the SPP04N60C3XKSA1 can also be used to control the power delivered to a load in applications such as voltage regulators and power management systems. It has a very low on-resistance, making it suitable for high power applications. Additionally, its low gate-threshold voltage and low gate-charge make it ideal for a variety of switched-mode power converter designs.

Conclusion

The SPP04N60C3XKSA1 is a N-channel enhancement mode MOSFET that is commonly used in circuit designs such as general purpose power applications, smart power switches, and power management. It has a very low gate threshold voltage and low gate charge, making it ideal for power management designs such as switch mode power supplies, motor drivers and phase-shifted full bridge circuits. Additionally, its low on-resistance makes it suitable for high current applications.

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