SPP07N60CFDHKSA1

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The SPP07N60CFDHKSA1 is a power MOSFET device designed for use in high frequency power conversion applications. It is a component of the Texas Instruments Bipolar Junction Transistor (BJT) portfolio of products. The MOSFET offers a wide range of features, including low on resistance, low gate capacitance, and high breakdown voltage. The SPP07N60CFDHKSA1 is part of a family of power MOSFETs designed to deliver optimal performance in high frequency applications such as power supplies, converters, motor drives and inverters.

The SPP07N60CFDHKSA1 is a n-channel enhancement mode device. It is constructed as an integrated circuit (IC) on an isolated die mounted on an insulated metal plate. It utilizes advanced trench technology to provide high switching speeds, excellent thermal performance and good immunity to latch-up. The device provides a high current density and an optimized combination of on-resistance, Qrr, and gate charge for low switching losses and reduced efficiency losses.

Applications for the SPP07N60CFDHKSA1 include DC-DC converters, Point of Load (PoL) converters, AC-DC power conversion systems, motor drive systems, high power LED lighting and other DC-DC power conversion applications. The device is suitable for use in various portable electronic gadgets and automotive applications. It can also be used as a low-loss high-frequency switching element.

The device has a maximum operating temperature of 150°C, which ensures safe operation and maintains the device’s life expectancy. The SPP07N60CFDHKSA1 is characterized by low switches on resistance, high power dissipation and low gate charge. The combination of features makes it an ideal choice for fast switching applications requiring low on-state resistance, low gate charge and low power consumption.

The working principle of the SPP07N60CFDHKSA1 is based on the eMOSFET structure. This structure combines the advantages of a MOSFET and BJT devices by creating a structure that is as efficient as a bipolar junction transistor (BJT) and as power efficient as a metal–oxide–semiconductor field-effect transistor (MOSFET). The eMOSFET utilizes a gate structure that is similar to the one found in the MOSFET device. This gate structure provides a high level of gate control, allowing for precise control of the device\'s electrical characteristics and high current density operation. The gate is insulated from the channel and is used to control the flow of electrons in the channel. The gate is designed to be easily adjustable allowing for finer control over on resistance, gate capacitance and break down voltage.

The SPP07N60CFDHKSA1 is a high performance power MOSFET designed for use in high frequency power conversion applications. It utilizes advanced eMOSFET technology to provide a high level of on-state performance, low gate charge and low on resistance. The device offers good immunity to latch-up and excellent thermal performance making it an ideal choice for fast switching applications. It is suitable for use in various portable electronic gadgets and automotive applications and can be used as a low-loss, high-frequency switching element.

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