SPP04N80C3XKSA1

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The SPP04N80C3XKSA1 is a N-Channel MOSFET produced by Infineon Technologies for use in a variety of applications. The device is a high-speed, high-performance N-Channel MOSFET that can be used in a variety of applications, including high-voltage switching, power conversion, and robust, high-speed signal routing. This MOSFET can handle up to 800V on the drain and is capable of dissipating heat up to 70°C. The device operates over a wide temperature range of -30°C to 125°C. The maximum drain current is 15A, and the capacitance and total gate charge are 2.9nF and 22nC, respectively. The device has an RDS(ON) of 30mΩ @ 10V and a compact 10mmX3mm package.

The SPP04N80C3XKSA1 is a type of FET, short for “Field Effect Transistor.” FETs are transistors that use an electric field to create and control an electrical current between two terminals, the source and the drain. When the gate is electrically charged, it creates a conductive channel between the source and the drain, which allows electrical current to flow. The SPP04N80C3XKSA1 is an example of a MOSFET, or metal oxide semiconductor field effect transistor. This is a type of FET that utilizes a layered structure of silicon insulation between the source and the drain, which is used to control the current. This allows the MOSFET to operate with very low power and voltage, making it suitable for a variety of applications.

The SPP04N80C3XKSA1 is used in a variety of applications, from low-voltage switching to high-voltage applications. In low-voltage switching, the device can be used for signal routing and power conversion, such as in DC-DC converters. In high-voltage applications, the device can be used for switching and is well-suited for power supply applications, as it is capable of handling up to 800V. The device has high speed and low total gate charge, making it suitable for high-speed signal routing and low-power designs. It can be used in automotive systems, industrial applications, and home appliances.

The working principle of the SPP04N80C3XKSA1 is the same as other types of FETs. When the gate is electrically charged, it creates a conductive channel between the source and the drain, which allows electrical current to flow. This is known as the “on” state, where the current flows from the source to the drain. When the gate is not charged, the conductive channel is shut off and no current flows. This is known as the “off” state, when there is no current flow. Using this principle, the FET can be used for a variety of applications, such as switching, signal routing, and power conversion.

In conclusion, the SPP04N80C3XKSA1 is a N-Channel MOSFET produced by Infineon Technologies for use in a variety of applications. The device is a high-speed, high-performance N-Channel MOSFET that can be used in a variety of applications, including high-voltage switching, power conversion, and robust, high-speed signal routing. The device works by using the electric field to create and control an electrical current between two terminals, the source and the drain. The device has a wide temperature range of -30°C to 125°C, a maximum drain current of 15A, and an RDS(ON) of 30mΩ @ 10V. The device can be used in low-voltage and high-voltage applications, such as switching, signal routing, and power conversion.

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