Allicdata Part #: | SPP06N80C3XKSA1-ND |
Manufacturer Part#: |
SPP06N80C3XKSA1 |
Price: | $ 1.51 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Infineon Technologies |
Short Description: | MOSFET N-CH 800V 6A TO-220AB |
More Detail: | N-Channel 800V 6A (Tc) 83W (Tc) Through Hole PG-TO... |
DataSheet: | SPP06N80C3XKSA1 Datasheet/PDF |
Quantity: | 1000 |
1 +: | $ 1.36710 |
10 +: | $ 1.23354 |
100 +: | $ 0.99143 |
500 +: | $ 0.77112 |
1000 +: | $ 0.63893 |
Vgs(th) (Max) @ Id: | 3.9V @ 250µA |
Package / Case: | TO-220-3 |
Supplier Device Package: | PG-TO-220-3 |
Mounting Type: | Through Hole |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Power Dissipation (Max): | 83W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 785pF @ 100V |
Vgs (Max): | ±20V |
Gate Charge (Qg) (Max) @ Vgs: | 41nC @ 10V |
Series: | CoolMOS™ |
Rds On (Max) @ Id, Vgs: | 900 mOhm @ 3.8A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 10V |
Current - Continuous Drain (Id) @ 25°C: | 6A (Tc) |
Drain to Source Voltage (Vdss): | 800V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Active |
Packaging: | Tube |
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The SPP06N80C3XKSA1 is a N-channel MOSFET or a Metal Oxide Semiconductor Field Effect Transistor (MOSFET). These types of transistors are switching devices and are used to amplify and amplify signals. The SPP06N80C3XKSA1 is used for a variety of applications, including power switching, amplifier circuits, and voltage regulators.
The SPP06N80C3XKSA1 also has high frequency and low gate capacitance, making it suitable for gate drive circuits. It also has a low output capacitance and high charging current, making it suitable for high frequency applications. Additionally, the device has a high breakdown voltage, which is ideal for circuit protection applications.
The SPP06N80C3XKSA1 is based on the MOSFET architecture and has several physical features that set it apart from other types of transistors. The device has a source and drain that are linked by the gate terminal. The N-type channel is formed in the substrate, and the gate terminal is electrically isolated from the others. When a current is applied to the gate terminal, it changes the electric potential ion the channel, modulating the resistance from the source and drain.
The SPP06N80C3XKSA1 is a three-terminal device and works similarly to a single transistor. It has two operating states, the On-State and Off-State, which are determined by the voltage of the gate terminal. When a voltage is applied to the gate, the device will turn on, allowing current to flow from the source to the drain. When the gate voltage is reduced below the threshold voltage of the device, the device will turn off, blocking the flow of current.
In addition to its basic on-off operation, the SPP06N80C3XKSA1 can be operated in two other modes: linear mode and saturation mode. In linear mode, the device is used as an amplifier, where small variations in gate voltage cause large variations in current. In saturation mode, the device is used as an on-off switch, where gate voltage is applied to turn on or off the device.
The SPP06N80C3XKSA1 is a versatile MOSFET that is suitable for a wide variety of applications. It can be used as a basic on-off switch, an amplifier, or a voltage regulator, depending on its operating mode. The device has excellent switching performance, low on-resistance, and a high frequency of operation, making it a great choice for applications that require high speed and performance.
The specific data is subject to PDF, and the above content is for reference
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SPP08P06PBKSA1 | Infineon Tec... | 0.0 $ | 1000 | MOSFET P-CH 60V 8.8A TO-2... |
SPP04N50C3HKSA1 | Infineon Tec... | 0.0 $ | 1000 | MOSFET N-CH 560V 4.5A TO-... |
SPP02N60C3HKSA1 | Infineon Tec... | 0.0 $ | 1000 | MOSFET N-CH 650V 1.8A TO-... |
SPP03N60C3HKSA1 | Infineon Tec... | 0.0 $ | 1000 | MOSFET N-CH 650V 3.2A TO-... |
SPP04N60C3HKSA1 | Infineon Tec... | 0.0 $ | 1000 | MOSFET N-CH 650V 4.5A TO-... |
SPP07N60CFDHKSA1 | Infineon Tec... | 0.0 $ | 1000 | MOSFET N-CH 650V 6.6A TO-... |
SPP07N60C3HKSA1 | Infineon Tec... | 0.0 $ | 1000 | MOSFET N-CH 650V TO-220AB... |
SPP04N80C3XK | Infineon Tec... | 0.0 $ | 1000 | MOSFET N-CH 800V 4A TO-22... |
SPP06N80C3XK | Infineon Tec... | 0.0 $ | 1000 | MOSFET N-CH 800V 6A TO-22... |
SPP08N80C3XK | Infineon Tec... | 0.0 $ | 1000 | MOSFET N-CH 800V 8A TO-22... |
SPP07N60C3XKSA1 | Infineon Tec... | 1.86 $ | 455 | MOSFET N-CH 650V 7.3A TO-... |
SPP02N60S5HKSA1 | Infineon Tec... | 0.0 $ | 1000 | MOSFET N-CH 600V 1.8A TO-... |
SPP04N60S5BKSA1 | Infineon Tec... | 0.0 $ | 1000 | MOSFET N-CH 600V 4.5A TO-... |
SPP07N65C3HKSA1 | Infineon Tec... | 0.0 $ | 1000 | MOSFET N-CH 650V 7.3A TO-... |
SPP08P06PHXKSA1 | Infineon Tec... | 0.78 $ | 388 | MOSFET P-CH 60V 8.8A TO-2... |
SPP03N60C3XKSA1 | Infineon Tec... | 0.0 $ | 1000 | LOW POWER_LEGACY |
SPP04N50C3XKSA1 | Infineon Tec... | 0.7 $ | 1000 | LOW POWER_LEGACY |
SPP03N60S5XKSA1 | Infineon Tec... | 0.0 $ | 1000 | LOW POWER_LEGACY |
SPP08N50C3XKSA1 | Infineon Tec... | 0.0 $ | 1000 | MOSFET N-CH 560V 7.6A TO-... |
SPP02N60C3XKSA1 | Infineon Tec... | 0.0 $ | 1000 | LOW POWER_LEGACY |
SPP02N80C3XKSA1 | Infineon Tec... | 0.93 $ | 25 | MOSFET N-CH 800V 2A TO-22... |
SPP06N60C3XKSA1 | Infineon Tec... | 0.0 $ | 1000 | LOW POWER_LEGACY |
SPP07N60S5HKSA1 | Infineon Tec... | 0.0 $ | 1000 | LOW POWER_LEGACY |
SPP07N60S5XKSA1 | Infineon Tec... | 1.22 $ | 1000 | LOW POWER_LEGACY |
SPP07N65C3XKSA1 | Infineon Tec... | 0.0 $ | 1000 | LOW POWER_LEGACY |
SPP04N60C3XKSA1 | Infineon Tec... | 1.35 $ | 1000 | MOSFET N-CH 600V 4.5A TO-... |
SPP06N60C3HKSA1 | Infineon Tec... | 1.48 $ | 3 | MOSFET N-CH 650V 6.2A TO-... |
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