SPP06N80C3XKSA1 Allicdata Electronics
Allicdata Part #:

SPP06N80C3XKSA1-ND

Manufacturer Part#:

SPP06N80C3XKSA1

Price: $ 1.51
Product Category:

Discrete Semiconductor Products

Manufacturer: Infineon Technologies
Short Description: MOSFET N-CH 800V 6A TO-220AB
More Detail: N-Channel 800V 6A (Tc) 83W (Tc) Through Hole PG-TO...
DataSheet: SPP06N80C3XKSA1 datasheetSPP06N80C3XKSA1 Datasheet/PDF
Quantity: 1000
1 +: $ 1.36710
10 +: $ 1.23354
100 +: $ 0.99143
500 +: $ 0.77112
1000 +: $ 0.63893
Stock 1000Can Ship Immediately
$ 1.51
Specifications
Vgs(th) (Max) @ Id: 3.9V @ 250µA
Package / Case: TO-220-3
Supplier Device Package: PG-TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 83W (Tc)
FET Feature: --
Input Capacitance (Ciss) (Max) @ Vds: 785pF @ 100V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 41nC @ 10V
Series: CoolMOS™
Rds On (Max) @ Id, Vgs: 900 mOhm @ 3.8A, 10V
Drive Voltage (Max Rds On, Min Rds On): 10V
Current - Continuous Drain (Id) @ 25°C: 6A (Tc)
Drain to Source Voltage (Vdss): 800V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Tube 
Description

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The SPP06N80C3XKSA1 is a N-channel MOSFET or a Metal Oxide Semiconductor Field Effect Transistor (MOSFET). These types of transistors are switching devices and are used to amplify and amplify signals. The SPP06N80C3XKSA1 is used for a variety of applications, including power switching, amplifier circuits, and voltage regulators.

The SPP06N80C3XKSA1 also has high frequency and low gate capacitance, making it suitable for gate drive circuits. It also has a low output capacitance and high charging current, making it suitable for high frequency applications. Additionally, the device has a high breakdown voltage, which is ideal for circuit protection applications.

The SPP06N80C3XKSA1 is based on the MOSFET architecture and has several physical features that set it apart from other types of transistors. The device has a source and drain that are linked by the gate terminal. The N-type channel is formed in the substrate, and the gate terminal is electrically isolated from the others. When a current is applied to the gate terminal, it changes the electric potential ion the channel, modulating the resistance from the source and drain.

The SPP06N80C3XKSA1 is a three-terminal device and works similarly to a single transistor. It has two operating states, the On-State and Off-State, which are determined by the voltage of the gate terminal. When a voltage is applied to the gate, the device will turn on, allowing current to flow from the source to the drain. When the gate voltage is reduced below the threshold voltage of the device, the device will turn off, blocking the flow of current.

In addition to its basic on-off operation, the SPP06N80C3XKSA1 can be operated in two other modes: linear mode and saturation mode. In linear mode, the device is used as an amplifier, where small variations in gate voltage cause large variations in current. In saturation mode, the device is used as an on-off switch, where gate voltage is applied to turn on or off the device.

The SPP06N80C3XKSA1 is a versatile MOSFET that is suitable for a wide variety of applications. It can be used as a basic on-off switch, an amplifier, or a voltage regulator, depending on its operating mode. The device has excellent switching performance, low on-resistance, and a high frequency of operation, making it a great choice for applications that require high speed and performance.

The specific data is subject to PDF, and the above content is for reference

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