SPP06N60C3HKSA1 Allicdata Electronics
Allicdata Part #:

SPP06N60C3HKSA1-ND

Manufacturer Part#:

SPP06N60C3HKSA1

Price: $ 1.48
Product Category:

Discrete Semiconductor Products

Manufacturer: Infineon Technologies
Short Description: MOSFET N-CH 650V 6.2A TO-220
More Detail: N-Channel 650V 6.2A (Tc) 74W (Tc) Through Hole PG-...
DataSheet: SPP06N60C3HKSA1 datasheetSPP06N60C3HKSA1 Datasheet/PDF
Quantity: 3
1 +: $ 1.32930
Stock 3Can Ship Immediately
$ 1.48
Specifications
Series: CoolMOS™
Packaging: Tube 
Part Status: Obsolete
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 650V
Current - Continuous Drain (Id) @ 25°C: 6.2A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 10V
Rds On (Max) @ Id, Vgs: 750 mOhm @ 3.9A, 10V
Vgs(th) (Max) @ Id: 3.9V @ 260µA
Gate Charge (Qg) (Max) @ Vgs: 31nC @ 10V
Vgs (Max): ±20V
Input Capacitance (Ciss) (Max) @ Vds: 620pF @ 25V
FET Feature: --
Power Dissipation (Max): 74W (Tc)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Supplier Device Package: PG-TO220-3-1
Package / Case: TO-220-3
Description

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The SPP06N60C3HKSA1 is a high-voltage MOSFET, which is generally used in high power switching in the power supply, motor control and other electrical fields. It is part of a larger family of “single Mosfet” power switches, and has some unique features that set it apart from other similar devices.

Application Field

The SPP06N60C3HKSA1 is most often used in high power switching in the power supply and motor control industries. It is especially well suited for applications needing to handle high currents, as it is capable of handling up to 370A of drain current and 385V of drain voltage. Not only this, it is designed to have low on-state resistance, meaning it can switch very fast even at high currents. This makes it ideal for power supplies, DC motor control and industrial automation applications that require high current at high frequency.

Other than power conversion, it has also been used in industries where fast, efficient switching is required, such as automotive, marine and mobile communication, as well as for power factor correction for power supplies and battery chargers. Thanks to its low on-state and switching voltage thresholds, it is also capable of working with low input voltages, making it suitable for applications where this might be an issue.

Working Principle

The SPP06N60C3HKSA1 is a MOSFET, which stands for “Metal Oxide Semiconductor Field Effect Transistor”. The basic principles of a MOSFET are the same as a regular transistor, but it is a different type of device with some unique features. It is formed by having two gates, a source and a drain, with the source being the input and the drain being the output. To switch on the MOSFET, a small current is applied to the gate, which turns on a larger current from the source to the drain. This switch is controlled by the applied gate voltage.

The SPP06N60C3HKSA1 has a breakdown voltage of up to 385V at 350µA, and an on-state resistance of 0.005 Ohms, which allows for high current operation at high frequencies. It also has a low gate threshold voltage, which means it can work with low input voltages. This makes it ideal for power supplies and other applications where low voltages might be an issue. Additionally, the device has a fast switching speed of 180nS, making it perfect for applications that require high speed.

The entire device is packaged in a small 2x2 package, meaning it has a very small footprint, making it ideal for applications where space is at a premium. This also makes it suitable for surface mounting.

Conclusion

In conclusion, the SPP06N60C3HKSA1 is a high-voltage, low-resistance MOSFET that is perfect for high power switching applications. It has a high voltage rating and can handle currents up to 370A. Its low gate threshold voltage and fast switching speed makes it ideal for applications that require fast switching in a compact form factor. Its high reliability and performance make it a popular choice for many power supply, motor control and industrial automation applications.

The specific data is subject to PDF, and the above content is for reference

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