SPP03N60S5XKSA1

Series:	*
Part Status:	Obsolete

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Introduction

The SPP03N60S5XKSA1 is an insulated-gate bipolar transistor (IGBT) with excellent performance, built with a two-level cell/multi-field structure. It is designed to be a planar type and features a low limiting voltage and excellent ESD withstand capability. This particular device is classified into the Transistors - FETs, MOSFETs - Single category, meaning it is composed of a single gate field effect transistor. It is small in size and designed to withstand higher temperature ranges and large current carrying capacity.

Device Structure

The SPP03N60S5XKSA1 is composed of a floating channeled IGBT structure using a trench isolated process. The channel structure comprises of two n-channel regions, separated by a p+ region, which is placed across the drain and source. Both regions have their own insulated-gated field-effect transistors (IGFETs) for control. The collector and emitter are connected to the n-channel region and the p+ region, respectively.

Application Field

Due to its excellent performance and small size, the SPP03N60S5XKSA1 is used in high power regulation and switching applications. It is particularly suitable for applications such as DC-to-DC converters and free-wheeling diode applications; these are used in automotive and industrial device applications. It is also used in home appliances and in general, it is suitable for switching applications with a large current capacity.

Working Principle

The SPP03N60S5XKSA1 works on the principle of MOSFET operation. The device is composed of two insulated-gate field-effect transistors that are connected in series between the drain and source. When a negative voltage is applied to the gate, the electric field inverts the n-type region. This creates a p-type region and electrons flow from the drain to the source. When current flows from one transistor to the other, the electric field inverts the n-type region. This creates a p-type region, allowing current to flow from the source to the drain. The electric field is maintained by the gate, allowing for current control. By adjusting the electric field with the gate voltage, the SPP03N60S5XKSA1 device can be used to block or allow current flow. The device has a very low on-state resistance, meaning it can carry large amounts of current. It also has a very low voltage drop, meaning it is very efficient. This makes it suitable for applications that require high-conductance and high efficiency.

Conclusion

The SPP03N60S5XKSA1 is an insulated-gate bipolar transistor (IGBT), belonging to the Transistors - FETs, MOSFETs - Single category. With its small size and excellent performance, it is suitable for applications with a large current capacity and high-conductance. Its operation is based on the working principle of MOSFETs, and its gate voltage adjusts the electric field to control current flow. This makes it highly efficient and suitable for applications such as DC-to-DC converters and free-wheeling diode applications.

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