SPP04N60S5BKSA1

Vgs(th) (Max) @ Id:	5.5V @ 200µA
Package / Case:	TO-220-3
Supplier Device Package:	PG-TO220-3-1
Mounting Type:	Through Hole
Operating Temperature:	-55°C ~ 150°C (TJ)
Power Dissipation (Max):	50W (Tc)
FET Feature:	--
Input Capacitance (Ciss) (Max) @ Vds:	580pF @ 25V
Vgs (Max):	±20V
Gate Charge (Qg) (Max) @ Vgs:	22.9nC @ 10V
Series:	CoolMOS™
Rds On (Max) @ Id, Vgs:	950 mOhm @ 2.8A, 10V
Drive Voltage (Max Rds On, Min Rds On):	10V
Current - Continuous Drain (Id) @ 25°C:	4.5A (Tc)
Drain to Source Voltage (Vdss):	600V
Technology:	MOSFET (Metal Oxide)
FET Type:	N-Channel
Part Status:	Obsolete
Packaging:	Tube

Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us:   sales@allicdata.com

Introduction

The SPP04N60S5BKSA1 is a high performance N-Channel Super Junction MOSFET designed for a wide range of switching and power management applications. This MOSFET offers superior characteristics in a small package size and is suitable for applications including AC-DC conversion, power factor correction, switching power supplies, motor control systems and power converters.

Technology

The SPP04N60S5BKSA1 is a part of Super junction MOSFET family, a technology which uses special fabrication techniques to reduce the both on-state resistance (RDS(on)) and the gate charge (QG) to achieve high efficiency levels in power conversion applications. Super junction MOSFETs have the lowest RDS(on) among all the different MOSFET technologies. The biggest advantage of Super junction MOSFETs is their excellent current handling capability and high switching speeds, which enable them to handle high frequency switching applications with efficiency.

Features

The SPP04N60S5BKSA1 features an RDS(on) of 75 mΩ, current rating of 4A and maximum Vgs of 20V. This MOSFET uses the latest N-Channel Super Junction MOSFET technology and has a low total gate charge Qg of 24 nC. It is RoHS compliant and is has an extremely low package profile making it suitable for many applications in tight spaces. The other features of the SPP04N60S5BKSA1M include: • Superior switching characteristics • Low gate drive• High-speed switching• Low thermal resistance• Enhanced ESD capability

Applications and Working Principle

The SPP04N60S5BKSA1 is suitable for a wide range of applications and can be used in DC-DC converters, power factor correction, motor control, lighting and many other switching power supply applications..The use of the SPP04N60S5BKSA1 in an application can result in a highly efficient power design solution with lower device total power losses and higher performance with minimal board area.The working principle behind the SPP04N60S5BKSA1 is grounded in the physics of transistors, specifically the use of an insulated gate field effect transistor (IGFET). This type of transistor is able to control electrical current by use of an electric field, generated when a voltage is applied across the transistor’s gate, source and drain contacts. This allows the transistor to amplify and switch the electrical current flowing through it. The SPP04N60S5BKSA1 is a Super Junction MOSFET which employs minimal losses due to low specific on resistance (RDS(on)) and higher breakdown voltage and higher gate charge. This is achieved by using an innovative cell structure with multiple vertical p-n junctions. These cells are connected in parallel according to the number of channels required for an application. The very low on resistance reduces device losses, increasing efficiency. The device also has an internal capacitance which allows faster switching speeds and better thermal characteristics.

Conclusion

The SPP04N60S5BKSA1 is a high performance N-channel Super Junction MOSFET that provides superior features in a small package size. Its low on-resistance, high peak current rating, and low gate charge by have enabled it to be used in a variety of power conversion, motor control and switching power supply applications. As the needs of electronic systems evolve, new technologies such as the SPP04N60S5BKSA1 are expected to play an increasingly important role in powering and controlling electronic devices.

The specific data is subject to PDF, and the above content is for reference

Part Number	Manufacturer	Price	Quantity	Description