SPP04N80C3XK

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The SPP04N80C3XK is a surface-mount N-channel power MOSFET with a breakdown voltage of 800 V. This MOSFET offers a unique combination of low on-state resistance (RDS(on)) and fast switching capability, making it ideal for power management applications. With its high power handling capability, it is also suitable for applications where high power dissipation is required.

The SPP04N80C3XK is a N-channel MOSFET which means it has two terminals - a source, and a drain. When connected to a voltage source, a voltage drop is created between the source and the drain. As the voltage increases further, the MOSFET will pass the current through, allowing for a controlled amount of current. This type of transistor is widely used in power management applications, such as switching power supplies, motor drive circuits and motor control circuits.

The gate oxide insulation layer of the MOSFET is used to determine its breakdown voltage. This is the voltage level at which the transistor will become an open circuit, thus preventing any further current flow. The SPP04N80C3XK has a breakdown voltage of 800 V, which is higher than comparable MOSFETs. This high level of breakdown voltage allows for a larger voltage range of operation, making it suitable for a wide range of applications.

The on-state resistance (RDS(on)) of the SPP04N80C3XK is particularly low when compared to other MOSFETs, making it a very efficient transistor for high power applications. RDS(on) is the voltage drop across the MOSFET when it is in the on-state. Lower RDS(on) values result in higher efficiency, as less energy is wasted in the form of heat. The low RDS(on) of the SPP04N80C3XK ensures that it is an efficient transistor for applications where large amounts of power are required.

In addition to its low RDS(on), the SPP04N80C3XK also has a fast switching capability. This capability is determined by the gate charging voltage, which is the voltage required to charge the gate of the MOSFET. The lower the gate charging voltage, the faster the switching speed. The SPP04N80C3XK is capable of switching up to 10 volts at a switching frequency of up to 200 kHz, making it suitable for many high-speed power management applications.

In summary, the SPP04N80C3XK is an ideal power MOSFET choice for many applications. Its high breakdown voltage and low gate charging voltage ensure a wide range of operation and fast switching speed, while its low RDS(on) ensures high efficiency. Furthermore, it is a surface-mount device, which makes it an easy-to-use, cost effective solution for power management applications.

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