Allicdata Part #: | SPP08N80C3XK-ND |
Manufacturer Part#: |
SPP08N80C3XK |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Infineon Technologies |
Short Description: | MOSFET N-CH 800V 8A TO-220AB |
More Detail: | N-Channel 800V 8A (Tc) 104W (Tc) Through Hole PG-T... |
DataSheet: | SPP08N80C3XK Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Gate Charge (Qg) (Max) @ Vgs: | 60nC @ 10V |
Package / Case: | TO-220-3 |
Supplier Device Package: | PG-TO220-3 |
Mounting Type: | Through Hole |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Power Dissipation (Max): | 104W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 1100pF @ 100V |
Vgs (Max): | ±20V |
Series: | CoolMOS™ |
Vgs(th) (Max) @ Id: | 3.9V @ 470µA |
Rds On (Max) @ Id, Vgs: | 650 mOhm @ 5.1A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 10V |
Current - Continuous Drain (Id) @ 25°C: | 8A (Tc) |
Drain to Source Voltage (Vdss): | 800V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Obsolete |
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The SPP08N80C3XK is a N-channel MOSFET (Metal Oxide Semiconductor Field-Effect Transistor) that provides capabilities not available with any other type of MOSFET. This device is an ideal choice for switching circuits and power supply designs, as it provides the lowest possible on-state resistance for a given package size and drain-source breakdown voltage. The SPP08N80C3XK provides superior temperature and noise performance, making it well-suited for high-power applications in which sound quality and reliability are of paramount importance.
Application Field of SPP08N80C3XK
The SPP08N80C3XK is a popular choice for motor controller applications such as silent motor drives and high-efficiency, portable motor drives. It is also ideal for audio amplifiers, switch-mode power supplies and AC-DC switching power supplies, and is suitable for a wide range of applications including low-power portable equipment, notebook computers, TV receivers and digital audio amplifiers. The SPP08N80C3XK is also suitable for applications where low on-state resistance (RDS(ON)) and low switching loss (Qgd) are critical.
The SPP08N80C3XK has an excellent output linearity and is suitable for applications where dynamic input conditions are a factor. This makes it ideal for voltage regulator designs and any application requiring low switching losses and superior load transient response. In addition, the SPP08N80C3XK is highly durable, providing excellent power dissipation in a small package.
Working Principle of SPP08N80C3XK
The SPP08N80C3XK is an N-channel enhancement mode MOSFET, which means that it is normally “off” until a voltage is applied to the gate electrode. When a voltage is applied to the gate electrode, the conductivity between the drain and the source is enhanced. As the gate voltage is increased, the resistance between the drain and the source decreases. This is known as the transfer function of the MOSFET.
The SPP08N80C3XK is a low-voltage device that functions with gate-source voltage (Vgs) of 5V or less for optimal performance. The device is normally “off” when the gate-source voltage is below 4.5V. As the gate-source voltage increases beyond this, the device’s on-state resistance (RDSON) decreases and its current capabilities increase. The gate-source voltage at which the device begins to conduct is known as the threshold voltage (Vth).
The SPP08N80C3XK is an ideal choice for a variety of applications due to its low on-state resistance, low gate charge and fast switching speed. The device is also highly reliable, providing protection from reverse-voltage, current overshoot, and over-temperatures. Additionally, the SPP08N80C3XK has a low drain-source capacitance, which reduces switching losses and power dissipation. This makes it an ideal choice for a wide range of applications, including motor control, audio amplification, switch-mode power supplies, AC-DC switching power supplies, and voltage regulator designs.
The specific data is subject to PDF, and the above content is for reference
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SPP03N60C3XKSA1 | Infineon Tec... | 0.0 $ | 1000 | LOW POWER_LEGACY |
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SPP03N60S5XKSA1 | Infineon Tec... | 0.0 $ | 1000 | LOW POWER_LEGACY |
SPP08N50C3XKSA1 | Infineon Tec... | 0.0 $ | 1000 | MOSFET N-CH 560V 7.6A TO-... |
SPP02N60C3XKSA1 | Infineon Tec... | 0.0 $ | 1000 | LOW POWER_LEGACY |
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