SPP06N80C3XK

Gate Charge (Qg) (Max) @ Vgs:	41nC @ 10V
Package / Case:	TO-220-3
Supplier Device Package:	PG-TO220-3
Mounting Type:	Through Hole
Operating Temperature:	-55°C ~ 150°C (TJ)
Power Dissipation (Max):	83W (Tc)
FET Feature:	--
Input Capacitance (Ciss) (Max) @ Vds:	785pF @ 100V
Vgs (Max):	±20V
Series:	CoolMOS™
Vgs(th) (Max) @ Id:	3.9V @ 250µA
Rds On (Max) @ Id, Vgs:	900 mOhm @ 3.8A, 10V
Drive Voltage (Max Rds On, Min Rds On):	10V
Current - Continuous Drain (Id) @ 25°C:	6A (Tc)
Drain to Source Voltage (Vdss):	800V
Technology:	MOSFET (Metal Oxide)
FET Type:	N-Channel
Part Status:	Obsolete

Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us:   sales@allicdata.com

The SPP06N80C3XK is a type of Field Effect Transistor (FET) manufactured by ON Semiconductor. The FET is an insulated-gate type of transistor and is a part of the company’s SuperMESH family of products – a series of high performance integrated circuits with improved efficiency and power density. It is a single-die device which is used as a switch in power supply design to reduce switching losses, reduce manufacturing complexity and improve overall system reliability. It is a widely used component in automotive and telecom apps.The SPP06N80C3XK has a drain-source breakdown voltage of 800V, a drain current of 6A and a drain-source on-resistance of 0.58 ohms. It offers a low RDSon (drain-source on-state resistance) of 0.59mΩ, low gate charge of 17nC and a fast switching time of 44ns. It is a P-channel device, meaning it relies on the application of a negative voltage applied to its gate for its current to flow. As such, it is ideal for designs that require robust current control in this type of voltage setup. The FET also data sheet specifies an operating temperature range of -55°C to 175°C, making it suitable for a wide range of applications.The SPP06N80C3XK is most commonly used in high-frequency circuits, such as on-board DC–DC converters and SMPSs (switched-mode power supplies). It can also be used in Class-D audio amplifiers and full/half-bridge power supplies. It is also used in home-entertainment applications such as DC projectors, RF receivers and digital TV systems.Now let’s look at the working principle of SPP06N80C3XK. As a FET, it requires an electric field to control its current. This electric field is created when a gate voltage is applied to the transistor. As a P-Channel device, the gate must be connected to a negative voltage to turn it on and allow for current to flow. When the gate voltage is lower than the threshold voltage (VGSoff) of the transistor, the transistor is in the off-state and no current flows. When the gate voltage exceeds the threshold voltage (VGSon), the transistor is switched on and current will begin to flow through it.The SPP06N80C3XK is a versatile component with wide applications across many fields such as automotive, telecom, DC converters and home audio. It offers high reliability, low drain-source on-state resistance, low gate charge, fast switching and an extended temperature range. With these features, it is an ideal choice for applications looking for a high-performance solution.

The specific data is subject to PDF, and the above content is for reference

Part Number	Manufacturer	Price	Quantity	Description