SPP08N80C3XKSA1

Vgs(th) (Max) @ Id:	3.9V @ 470µA
Package / Case:	TO-220-3
Supplier Device Package:	PG-TO-220-3
Mounting Type:	Through Hole
Operating Temperature:	-55°C ~ 150°C (TJ)
Power Dissipation (Max):	104W (Tc)
FET Feature:	--
Input Capacitance (Ciss) (Max) @ Vds:	1100pF @ 100V
Vgs (Max):	±20V
Gate Charge (Qg) (Max) @ Vgs:	60nC @ 10V
Series:	CoolMOS™
Rds On (Max) @ Id, Vgs:	650 mOhm @ 5.1A, 10V
Drive Voltage (Max Rds On, Min Rds On):	10V
Current - Continuous Drain (Id) @ 25°C:	8A (Tc)
Drain to Source Voltage (Vdss):	800V
Technology:	MOSFET (Metal Oxide)
FET Type:	N-Channel
Part Status:	Active
Packaging:	Tube

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<p>SPP08N80C3XKSA1 is a N-Channel enhancement mode power field effect transistor (FET) based on advanced technology. It has a much higher Drain-Source voltage and a higher current rating than standard MOSFET’s. This device also features a very low on-resistance which makes it suitable for applications such as switching power supplies, motor control, audio amplifiers, and high-speed switching.</p><p>The SPP08N80C3XKSA1 is a single-channel FET with a total gate charge (Qg) of 11 nC and a maximum rDS(on) of 0.36 ohm. It is rated at 800V and 8A, and offers superior performance over standard MOSFET’s with a similar on-resistance. It is available in a TO-220AB package, making it an excellent choice for space-limited design.</p><p>The SPP08N80C3XKSA1 has numerous applications in electronics. Due to its large drain-source voltage and its low on-resistance, it can be used for applications such as switching power supplies, motor control, audio amplifiers, and high-speed switching. It is also popular for use in automotive applications, such as lighting systems and on-board computers.</p><p>The working principle of the SPP08N80C3XKSA1 is based on the Gate-Source voltage (VGS) controlling the current flow. When a positive voltage is applied to the Gate-Source (VGS), the transistor turns on, allowing a current to flow between the Drain and Source terminals. The amount of current that can flow is dependent on the value of the Gate-Source voltage, and the resistance values of RDS(on) and any other associated components.</p><p>The SPP08N80C3XKSA1 has an operational temperature range of -55℃ to +150℃, and a maximum operating temperature of 175℃. It also has a breakdown voltage (BVDSS) rating of 800V, with a maximum forward drain current of 8A. It is designed with a variety of features and parameters to make it suitable for a wide range of applications.</p><p>The SPP08N80C3XKSA1 is a useful device for electronic engineers and hobbyists, due to its low on-resistance and its capability of handling large currents. It is suitable for many applications, such as power supplies, motor control, audio amplifiers, and high-speed switching. Its use as a single-channel FET makes it a great choice for space-limited design, and its 800V rating makes it an ideal choice for automotive applications.</p>

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