Allicdata Part #: | 497-4099-2-ND |
Manufacturer Part#: |
STB16PF06LT4 |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | STMicroelectronics |
Short Description: | MOSFET P-CH 60V 16A D2PAK |
More Detail: | P-Channel 60V 16A (Tc) 70W (Tc) Surface Mount D2PA... |
DataSheet: | STB16PF06LT4 Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Current - Continuous Drain (Id) @ 25°C: | 16A (Tc) |
Drive Voltage (Max Rds On, Min Rds On): | 5V, 10V |
Rds On (Max) @ Id, Vgs: | 125 mOhm @ 8A, 10V |
Vgs(th) (Max) @ Id: | 1.5V @ 100µA |
Gate Charge (Qg) (Max) @ Vgs: | 15.5nC @ 4.5V |
Vgs (Max): | ±16V |
Input Capacitance (Ciss) (Max) @ Vds: | 630pF @ 25V |
FET Feature: | -- |
Power Dissipation (Max): | 70W (Tc) |
Operating Temperature: | -55°C ~ 175°C (TJ) |
Mounting Type: | Surface Mount |
Supplier Device Package: | D2PAK |
Package / Case: | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
Series: | STripFET™ |
Packaging: | Tape & Reel (TR) |
Part Status: | Obsolete |
FET Type: | P-Channel |
Technology: | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): | 60V |
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The STB16PF06LT4 is a new-generation power MOS field-effect transistor (MOSFET) manufactured by STMicroelectronics. The device is an advanced MOSFET that is designed to offer a low on-state resistance, low gate charge, and superior thermal performance.
The STB16PF06LT4 has an operating voltage range from 4.5V to 60V for both source and sink applications. It is suitable for a wide range of applications, including DC to DC converters, inverters, motor control, and switching applications. The device features superior thermal robustness, due to its low input and output capacitance, low gate charge, and low resistance.
The STB16PF06LT4 also features a reduced on-state resistance of 16 mΩ and a high transition frequency of 4.5 MHz. It also features a high breakdown voltage of 110V and is rated to handle up to 1A of continuous current. The device is RoHS-compliant and is available in an exposed-pad TSSOP package.
The STB16PF06LT4 works by applying a voltage to a gate terminal to create a conductive path between the source and drain terminals. When the voltage at the gate is increased, the resistance between the source and drain is decreased and more current is allowed to flow. When the voltage at the gate is decreased, the resistance between source and drain increases, thus reducing the current flow.
The device is capable of handling high power and offers very low on-state resistance, making it ideal for applications such as DC-DC converters, motor control, and switching applications. The low gate charge and superior thermal performance of the STB16PF06LT4 offer robustness and reliability. The device also features a high breakdown voltage and is rated to handle up to 1A of continuous current.
Due to its superior performance and low cost, the STB16PF06LT4 has become a popular choice for a variety of power MOSFET applications. Its low on-state resistance, low gate charge, and superior thermal performance make it ideal for a variety of power processing tasks. The device is also RoHS-compliant and is available in an exposed-pad TSSOP package.
The specific data is subject to PDF, and the above content is for reference
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