STB18NF30 Allicdata Electronics
Allicdata Part #:

497-12970-2-ND

Manufacturer Part#:

STB18NF30

Price: $ 1.08
Product Category:

Discrete Semiconductor Products

Manufacturer: STMicroelectronics
Short Description: MOSFET N-CH 330V 18A D2PAK
More Detail: N-Channel 330V 18A (Tc) 150W (Tc) Surface Mount D2...
DataSheet: STB18NF30 datasheetSTB18NF30 Datasheet/PDF
Quantity: 1000
1 +: $ 1.08000
10 +: $ 1.04760
100 +: $ 1.02600
1000 +: $ 1.00440
10000 +: $ 0.97200
Stock 1000Can Ship Immediately
$ 1.08
Specifications
Vgs(th) (Max) @ Id: 4V @ 250µA
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Supplier Device Package: D2PAK
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Power Dissipation (Max): 150W (Tc)
FET Feature: --
Input Capacitance (Ciss) (Max) @ Vds: 1650pF @ 25V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 44nC @ 10V
Series: Automotive, AEC-Q101, STripFET™ II
Rds On (Max) @ Id, Vgs: 180 mOhm @ 9A, 10V
Drive Voltage (Max Rds On, Min Rds On): 10V
Current - Continuous Drain (Id) @ 25°C: 18A (Tc)
Drain to Source Voltage (Vdss): 330V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Tape & Reel (TR) 
Description

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The STB18NF30 is a 30V N-Channel enhancement mode power field effect transistor (FET). This FET offers high speed switching performance and high current load capacity, making it the ideal choice for applications requiring fast switching and high power. The device is suitable for applications such as high performance switching regulators, high speed switch mode power supplies, DC-to-DC converters, and high current switching circuits. The STB18NF30 is constructed of high-quality semiconductor materials with a self-protected dielectric coating. This allows for robust performance in both high power and high frequency applications.

The STB18NF30 is an N-Channel Field Effect Transistor (FET) that has a metal-oxide-semiconductor structure. This device operates as a switch, controlling the conduction of electrons between source and drain terminals in the presence of an electric field. The STB18NF30 is characterized by a low on-state resistance (RDSon) that is typically 11mΩ when VGS(Gate-Source Voltage) is 10V. This is due to the high mobility of charge carriers in the parasitic N+ channel, making the STB18NF30 well suited for high load currents. The STB18NF30 also offers wide turn-on and turn-off times, allowing for fast switching in high frequency applications. The nominal threshold voltage for turn-on is 3.0V and turn-off is 5.0V.

In order to operate correctly, the STB18NF30 must be installed correctly with the appropriate polarity. The Source terminal of the FET is connected to the negative potential and the Drain is connected to the positive potential. This ensures that the electric field is applied in the correct direction across the channel of the inverter, thereby enabling current conduction. Once installed the FET can be driven by either an input signal or an external VGS. The internal circuitry of the FET then regulates the flow of current between Source and Drain based on the input signal.

The STB18NF30 can be used for a wide variety of applications requiring fast switching and high power. The device is suitable for use in applications such as power switching regulators, high speed switch mode power supplies, DC-to-DC converters, and high current switching circuits. Due to its low on-state resistance and wide turn-on and turn-off times, the STB18NF30 is ideal for high current, high frequency applications. The self-protected dielectric coating allows for robust performance in these applications.

The specific data is subject to PDF, and the above content is for reference

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