
Allicdata Part #: | 497-12970-2-ND |
Manufacturer Part#: |
STB18NF30 |
Price: | $ 1.08 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | STMicroelectronics |
Short Description: | MOSFET N-CH 330V 18A D2PAK |
More Detail: | N-Channel 330V 18A (Tc) 150W (Tc) Surface Mount D2... |
DataSheet: | ![]() |
Quantity: | 1000 |
1 +: | $ 1.08000 |
10 +: | $ 1.04760 |
100 +: | $ 1.02600 |
1000 +: | $ 1.00440 |
10000 +: | $ 0.97200 |
Vgs(th) (Max) @ Id: | 4V @ 250µA |
Package / Case: | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
Supplier Device Package: | D2PAK |
Mounting Type: | Surface Mount |
Operating Temperature: | -55°C ~ 175°C (TJ) |
Power Dissipation (Max): | 150W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 1650pF @ 25V |
Vgs (Max): | ±20V |
Gate Charge (Qg) (Max) @ Vgs: | 44nC @ 10V |
Series: | Automotive, AEC-Q101, STripFET™ II |
Rds On (Max) @ Id, Vgs: | 180 mOhm @ 9A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 10V |
Current - Continuous Drain (Id) @ 25°C: | 18A (Tc) |
Drain to Source Voltage (Vdss): | 330V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Active |
Packaging: | Tape & Reel (TR) |
Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us: sales@allicdata.com
The STB18NF30 is a 30V N-Channel enhancement mode power field effect transistor (FET). This FET offers high speed switching performance and high current load capacity, making it the ideal choice for applications requiring fast switching and high power. The device is suitable for applications such as high performance switching regulators, high speed switch mode power supplies, DC-to-DC converters, and high current switching circuits. The STB18NF30 is constructed of high-quality semiconductor materials with a self-protected dielectric coating. This allows for robust performance in both high power and high frequency applications.
The STB18NF30 is an N-Channel Field Effect Transistor (FET) that has a metal-oxide-semiconductor structure. This device operates as a switch, controlling the conduction of electrons between source and drain terminals in the presence of an electric field. The STB18NF30 is characterized by a low on-state resistance (RDSon) that is typically 11mΩ when VGS(Gate-Source Voltage) is 10V. This is due to the high mobility of charge carriers in the parasitic N+ channel, making the STB18NF30 well suited for high load currents. The STB18NF30 also offers wide turn-on and turn-off times, allowing for fast switching in high frequency applications. The nominal threshold voltage for turn-on is 3.0V and turn-off is 5.0V.
In order to operate correctly, the STB18NF30 must be installed correctly with the appropriate polarity. The Source terminal of the FET is connected to the negative potential and the Drain is connected to the positive potential. This ensures that the electric field is applied in the correct direction across the channel of the inverter, thereby enabling current conduction. Once installed the FET can be driven by either an input signal or an external VGS. The internal circuitry of the FET then regulates the flow of current between Source and Drain based on the input signal.
The STB18NF30 can be used for a wide variety of applications requiring fast switching and high power. The device is suitable for use in applications such as power switching regulators, high speed switch mode power supplies, DC-to-DC converters, and high current switching circuits. Due to its low on-state resistance and wide turn-on and turn-off times, the STB18NF30 is ideal for high current, high frequency applications. The self-protected dielectric coating allows for robust performance in these applications.
The specific data is subject to PDF, and the above content is for reference
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