STB10LN80K5

Vgs(th) (Max) @ Id:	5V @ 100µA
Package / Case:	TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Supplier Device Package:	D2PAK
Mounting Type:	Surface Mount
Operating Temperature:	-55°C ~ 150°C (TJ)
Power Dissipation (Max):	110W (Tc)
FET Feature:	--
Input Capacitance (Ciss) (Max) @ Vds:	427pF @ 100V
Vgs (Max):	±30V
Gate Charge (Qg) (Max) @ Vgs:	15nC @ 10V
Series:	MDmesh™ K5
Rds On (Max) @ Id, Vgs:	630 mOhm @ 4A, 10V
Drive Voltage (Max Rds On, Min Rds On):	10V
Current - Continuous Drain (Id) @ 25°C:	8A (Tc)
Drain to Source Voltage (Vdss):	800V
Technology:	MOSFET (Metal Oxide)
FET Type:	N-Channel
Part Status:	Active
Packaging:	Tape & Reel (TR)

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STB10LN80K5 Application Field and Working Principle

STB10LN80K5 is a unique and highly advanced MOSFET, or a Metal Oxide Semiconductor Field Effect Transistor. It is specially designed for increased efficiency and fast switching in power applications and is increasingly popular in the industry. This article will explain the application field of the STB10LN80K5 as well as its working principle.

Application Field of the STB10LN80K5

The STB10LN80K5 is a kind of MOSFET with a nominal drain-source voltage of 800 volts and a max drain current of 10A. It is commonly used for the applications requiring higher efficiency, less energy, and fast switching, especially applicable for applications such as battery management, power conversion, switching power supplies, power tools, automotive systems and home appliances. Due to its low on-resistance, high efficiency, and fast switching speed, the STB10LN80K5 can reduce the ringing noise, which definitely provides better performance in the power designs. Energy efficiency is also improved a lot due to its low energy loss during operating. The STB10LN80K5 also has a wide temperature range, which can withstand a temperature range from -55℃ to 175℃, and thus it is able to perform well in harsh environmental conditions.

Working Principle of the STB10LN80K5

The STB10LN80K5 is a type of MOSFET, which means it has a metal gate and metal oxide as the gate electrode. The function of the gate is to control the electric field and allow current to pass or not pass through it. When the gate of the STB10LN80K5 is left open, there is no current passing through. When a voltage is applied to the gate, current passing from the source to the drain can be controlled. When the gate voltage reaches the threshold voltage, the current passing will reach the saturation level.The threshold voltage is an important electrical parameter for MOSFETs. It is the voltage at which the device begins conduction. It is a function of the dielectric film thickness between the gate and source of the FET. The drain-source voltage is also an important parameter for MOSFETs, which is the voltage that can be applied between the drain and source of the device. It is determined by the drain current and body diode rating of the FET.

Conclusion

In conclusion, the STB10LN80K5 is a highly advanced MOSFET, specially designed for increased efficiency, less consumption of energy, and fast switching in power applications. Its application fields mainly include battery management, power conversion, switching power supplies, power tools, automotive systems and home appliances. The STB10LN80K5 also works according to the principle of metal oxide and is able to control current passing through by adjusting the gate voltage. The threshold voltage and the drain-source voltage are two important parameters of this device.

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