Allicdata Part #: | STB141NF55-ND |
Manufacturer Part#: |
STB141NF55 |
Price: | $ 0.87 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | STMicroelectronics |
Short Description: | MOSFET N-CH 55V 80A D2PAK |
More Detail: | N-Channel 55V 80A (Tc) 300W (Tc) Surface Mount D2P... |
DataSheet: | STB141NF55 Datasheet/PDF |
Quantity: | 1000 |
1000 +: | $ 0.78790 |
Vgs(th) (Max) @ Id: | 4V @ 250µA |
Package / Case: | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
Supplier Device Package: | D2PAK |
Mounting Type: | Surface Mount |
Operating Temperature: | -55°C ~ 175°C (TJ) |
Power Dissipation (Max): | 300W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 5300pF @ 25V |
Vgs (Max): | ±20V |
Gate Charge (Qg) (Max) @ Vgs: | 142nC @ 10V |
Series: | STripFET™ II |
Rds On (Max) @ Id, Vgs: | 8 mOhm @ 40A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 10V |
Current - Continuous Drain (Id) @ 25°C: | 80A (Tc) |
Drain to Source Voltage (Vdss): | 55V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Active |
Packaging: | Tape & Reel (TR) |
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The STB141NF55 is an N-channel enhancement general-purpose field-effect transistor (FET). It is fabricated as a single device and comprises of a body, a source, a drain, and a gate. Generally, FETs are considered as conductors when they are turned ‘on’ and are nonconductors when they are turned ‘off’. As the gate voltage is increased, the resistance between the drain and source terminals increases and vice versa. These FETs are ideal for use in high-speed switching, high power amplifier design and power switching circuits.
STB141NF55 transistors come in a number of package styles, including DPAK, D2PAK, TO-220, and SO-8. The advantages of using these FETs include low on-resistance, low driving power and low gate charge. Furthermore, these transistors have low gate threshold voltage and high-speed switching performance. STB141NF55 FETs are available in a wide range of Drain-Source Voltage (V DS ) ratings of up to 200V, and a wide range of drain current (I DS ) ratings of up to 210A. All these ratings make the transistor a good choice for use in power switching circuits.
The working principle of the STB141NF55 transistor is similar to that of other FET types. The gate terminal is connected to a voltage source and the voltage between the gate and source terminals is referred to as the gate-source voltage (V GS ). A positive gate-source voltage increases the conductivity of the drain-source channel and reduces the resistance between the drain and source terminals. Conversely, a negative gate-source voltage reduces the conductivity and increases the resistance. This makes FETs ideal for use in switching circuits, as their drain-source channel can be turned ‘on’ and ‘off’.
The drain-source voltage (V DS ) rating of an STB141NF55 FET is the maximum voltage that can be applied between the drain and source terminals without damaging the device. Generally, FETs are not damaged by excessive drain-source voltage, but by excessive drain current. For example, if the drain current exceeds its maximum ratings, the device will be damaged due to excessive power dissipation. Therefore, it is important to determine the maximum power dissipation before using a FET.
The STB141NF55 FET can be used in a variety of applications, including high-voltage switching, motor control, and power conversion circuits. In these applications, the FET can be used as a switching device or an amplifier to control the voltage and current in a circuit. Furthermore, the STB141NF55 is ideal for use in high-current power amplification circuits, as it can achieve high power dissipation with low on-resistance.
In summary, the STB141NF55 is a single-chip N-channel enhancement FET. It is ideal for use in high-speed switching, high power amplifier design and power switching circuits due to its wide range of drain-source voltage and drain current ratings. The working principle of the STB141NF55 is similar to that of other FETs, with its drain-source channel turning ‘on’ and ‘off’ based on the gate-source voltage. The STB14NF55 FET can be used in a variety of applications, including high-voltage switching, motor control, and power conversion circuits, making it an ideal choice for power switching applications.
The specific data is subject to PDF, and the above content is for reference
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