STB15NM65N

Vgs(th) (Max) @ Id:	4V @ 250µA
Package / Case:	TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Supplier Device Package:	D2PAK
Mounting Type:	Surface Mount
Operating Temperature:	-55°C ~ 150°C (TJ)
Power Dissipation (Max):	150W (Tc)
FET Feature:	--
Input Capacitance (Ciss) (Max) @ Vds:	1900pF @ 50V
Vgs (Max):	±25V
Gate Charge (Qg) (Max) @ Vgs:	55nC @ 10V
Series:	MDmesh™ II
Rds On (Max) @ Id, Vgs:	270 mOhm @ 7.75A, 10V
Drive Voltage (Max Rds On, Min Rds On):	10V
Current - Continuous Drain (Id) @ 25°C:	12A (Tc)
Drain to Source Voltage (Vdss):	650V
Technology:	MOSFET (Metal Oxide)
FET Type:	N-Channel
Part Status:	Obsolete
Packaging:	Tape & Reel (TR)

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STB15NM65N is a medium-voltage and low-power Field-Effect Transistor (FET) that has a packaging type known as TO-H310. This FET is a single chip device which uses MOSFET technology, the Metal Oxide Semiconductor Field-Effect Transistor. It is a relatively small and compact transistor which offers high efficiency and reliability in many different applications.    The STB15NM65N is commonly used for high-frequency circuits and power converters that require a large current handling capability and very low switching noise. It is ideal for applications such as resonant circuits, switch-mode power supplies (SMPS), motor drives, and other power switching applications. The FET is rated for a drain to source voltage (Vdss) up to 15V and a drain current (Id) up to 50A. Its on-resistance (Rdson) is only 0.013 ohms, which makes it very suitable for power switching applications where low on-resistance is required. Additionally, the FET has a maximum drain-source capacitance of just 1.15nF when operating at a VGS of 10V, which makes it ideal for a wide range of high-frequency circuit designs.    The STB15NM65N FET utilizes the Source-Drain Diode Reverse-Recovery protection scheme. This scheme is used to protect maintaining the device from high current and voltage spikes which can be caused by inductive loads, passing through the FET. Additionally, the FET includes an integrated temperature range of -55°C to 175°C, which makes it suitable for almost all applications in terms of temperature.    The STB15NM65N operates by redirecting current flow when a negative or positive voltage is applied to the gate. This voltage causes a depleted layer of charge at the surface of the FET, which acts like a valve, preventing current from passing through. When the voltage is removed, the depleted layer disappears and current is allowed to flow through the FET. The process of applying or removing the voltage at the gate is known as gating or switching.    The STB15NM65N is also used in applications such as pulse-width modulation (PWM) control, battery chargers and other switch-mode power supply applications. It offers low on-resistance, along with temperature and current protection, making it ideal for these applications. Additionally, the FET\'s efficient switching speed and maximum drain-source capacitance of 1.15nF offers enhanced performance for high-frequency applications.    Overall, the STB15NM65N FET offers reliable, efficient and cost-effective performance for a variety of applications. It includes low on-resistance, current and temperature protection, along with fast switching times and low gate capacitance, which make it well suited to a wide range of applications. Its compact size and affordable cost make the FET a great choice for a variety of applications, including switch-mode power supplies, pulse-width modulation control, resonant circuits and other power-switching applications.

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