STB13NM50N

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STB13NM50N Application Field and Working Principle

The STB13NM50N is a N-channel, enhancement-mode, Field-Effect Transistor (FET) chip manufactured by STMicroelectronics. It is based on STMicroelectronics’ STripFET™ V power MOSFET Technology, which was designed to offer enhanced performance and reliability compared to traditional FETs. The STB13NM50N is well-suited for a range of applications from consumer electronics to industrial and automotive applications.The STB13NM50N is part of the STripGE™ family of devices, designed for applications where fast switching off-state characteristics and low on-resistance are required. The STB13NM50N provides these characteristics in a small 6 mm x 6 mm DPAK package and is rated for continuous drain current handling of 13A. The device’s drain-source voltage is rated for 55 V, and the gate-source voltage is rated for 20 V. It has an on-resistance of 5.9 mΩ at 10 V and a maximum power dissipation rating of 11.5 W.

Functionality

The STB13NM50N is a voltage-controlled FET that is used to switch electrical signals between two nodes. It is an enhancement-mode FET, meaning it requires an external voltage or current applied to the gate in order to turn the device “on” and allow a current to flow between the source and the drain. When the external voltage is removed, the device is “off” and no current flows. This makes the STB13NM50N well-suited for applications requiring control of electrical signals in circuits.

Application Fields

The STB13NM50N is commonly used in automotive applications such as motor control, electric vehicles, memory storage, and motor drivers. It is also used in popular consumer electronic products such as appliances, power supplies, and LCD televisions. The device is also suitable for industrial applications requiring high frequency switching, such as in electric power tools, AC-DC converters, and lighting. Additionally, the device is used in medical electronics for imaging, prosthetic control, and pacemakers.

Working Principle

The STB13NM50N works off of the same principle as other Field-Effect Transistors (FETs), where a voltage or current applied to the gate controls the flow of current between the source and the drain. The FET acts as an electronically controlled switch, where the current is controlled by the voltage on the gate. The voltage on the gate “turns on” the device, allowing a current to flow, and “turns off” the device, cutting off the current. By adjusting the voltage, the current can be varied, while at the same time providing a high switching speed, low on-resistance, and fast off-state performance.

Conclusion

The STB13NM50N is an N-channel enhancement-mode Field-Effect Transistor (FET). It is well-suited for applications requiring fast switching off-state characteristics and low on-resistance, such as in automotive, consumer, industrial, and medical electronics. The device’s working principle is based on the same principles as other FETs, where a voltage or current applied to the gate controls the flow of current between the source and the drain. This provides for high switching speeds, low on-resistance, and fast off-state performance.

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