Allicdata Part #: | STB17N80K5-ND |
Manufacturer Part#: |
STB17N80K5 |
Price: | $ 1.79 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | STMicroelectronics |
Short Description: | MOSFET N-CHANNEL 800V 14A D2PAK |
More Detail: | N-Channel 800V 14A (Tc) 170W (Tc) Surface Mount D2... |
DataSheet: | STB17N80K5 Datasheet/PDF |
Quantity: | 1000 |
1000 +: | $ 1.61781 |
Vgs(th) (Max) @ Id: | 5V @ 250µA |
Package / Case: | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
Supplier Device Package: | D2PAK |
Mounting Type: | Surface Mount |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Power Dissipation (Max): | 170W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 866pF @ 100V |
Vgs (Max): | ±30V |
Gate Charge (Qg) (Max) @ Vgs: | 26nC @ 10V |
Series: | MDmesh™ K5 |
Rds On (Max) @ Id, Vgs: | 340 mOhm @ 7A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 10V |
Current - Continuous Drain (Id) @ 25°C: | 14A (Tc) |
Drain to Source Voltage (Vdss): | 800V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Active |
Packaging: | Tape & Reel (TR) |
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STB17N80K5 is a n-channel Power MOSFET with a breakdown voltage of 800V. It has got a current capability of up to 17A. STB17N80K5 is manufactured by STMicroelectronics and has been designed to provide high switching performance, low gate charge and low on-state resistance. It is suitable for applications that require high efficiency in order to obtain the best performance.
The main application field for the STB17N80K5 is in power supplies and lighting applications, such as AC-DC power conversion, switch-mode power supplies, lighting ballasts, and high-power converters. The device is also suitable for various consumer electronics like smart phones, battery chargers, set-top boxes and appliances.
The most important factor for selecting a MOSFET for such applications is the power dissipation capability. The STB17N80K5 is suitable for applications with high power dissipation as it has a low conduction loss. The device can provide highest efficiency with a low on-state resistance of 0.24 Ohm. The device can handle a current of 17A and still maintain almost the same level of on-state resistance. This device is a great choice for applications that need a high-current handling capacity, such as AC-DC converters and motor control.
Another important feature to consider when selecting a Power MOSFET is the gate threshold voltage. The STB17N80K5 has an absolute gate threshold voltage of 4.5V. This low voltage allows the device to operate at high currents with minimal power consumption. This helps reduce switching losses, thus increasing efficiency.
The working principle of Power MOSFET is based on the principle of majority-carrier conductivity. In the STB17N80K5, a majority-carrier current flows when a positive voltage is applied to the gate. This creates an inversion layer in the channel region and allows charge carriers to move across the channel. The width of the channel is then determined by the voltage applied to the gate, which in turn controls the magnitude of the current.
The STB17N80K5 is suitable for applications that require high-efficiency switching such as AC-DC power conversion, switch-mode power supplies, lighting ballasts, and high-power converters. Its low gate threshold voltage and low on-state resistance offer excellent power dissipation and high current capability, resulting in enhanced performance.
The specific data is subject to PDF, and the above content is for reference
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