STB30N80K5

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Transistors can be divided into Field-Effect Transistors (FET) and Bipolar Junction Transistors (BJT) based on the type of current flow that they control. FETs are further divided into Junction Field-Effect Transistors (JFETs) and Metal Oxide Semiconductor Field-Effect Transistors (MOSFETs). Single-power MOSFETs are capable of switching large amounts of electric current with low gate voltage and low gate power. One of the most common single-power MOSFETs available in the market is STB30N80K5. This transistor is suitable for switching applications in different fields of application such as power supplies, converters, and motor control.

STB30N80K5 is an N channel MOSFET with a drain current of 30A, a continuous drain-source voltage of 800V and a maximum drain source voltage of 900V. It has a low power dissipation and a maximum gate-source voltage of ±20V, which makes it a perfect choice for applications that require low gate power. It has a very low gate charge and an on-state resistance of 0.19m ohms. It has an operating temperature range between -55°C and 150°C and can handle up to 175°C if a heatsink is used.

The STB30N80K5’s working principle is based on the use of a gate voltage to control the flow of the current from the Drain to the Source. When a positive gate-source voltage is applied, the transistor will become conductive, thus allowing the drain current to flow. When a negative gate-source voltage is applied, the transistor will become non-conductive, thus stopping the flow of the drain current. This makes MOSFETs very suitable for power switching applications in many different fields of applications.

STB30N80K5 is suitable for many different types of applications such as power supplies, converters, and motor control. Power supplies are electronic devices which convert the input power into another form of energy. Converters are electronic devices which convert between different electrical voltage levels. Motor control is used to control the speed of a motor. STB30N80K5 can also be used to control the switching of high-speed signals.

In conclusion, STB30N80K5 is an N channel power MOSFET with a drain current of 30A and a continuous drain-source voltage of 800V. It is suitable for power switching applications in power supplies, converters, motor control and high-speed signal switching. Its working principle is based on the use of a gate voltage to control the flow of the current from the Drain to the Source.

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