STB30NF20L

Vgs(th) (Max) @ Id:	3V @ 250µA
Package / Case:	TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Supplier Device Package:	D2PAK
Mounting Type:	Surface Mount
Operating Temperature:	-55°C ~ 175°C (TJ)
Power Dissipation (Max):	150W (Tc)
FET Feature:	--
Input Capacitance (Ciss) (Max) @ Vds:	1990pF @ 25V
Vgs (Max):	±20V
Gate Charge (Qg) (Max) @ Vgs:	65nC @ 10V
Series:	Automotive, AEC-Q101, STripFET™
Rds On (Max) @ Id, Vgs:	75 mOhm @ 15A, 5V
Drive Voltage (Max Rds On, Min Rds On):	5V
Current - Continuous Drain (Id) @ 25°C:	30A (Tc)
Drain to Source Voltage (Vdss):	200V
Technology:	MOSFET (Metal Oxide)
FET Type:	N-Channel
Part Status:	Active
Packaging:	Tape & Reel (TR)

Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us:   sales@allicdata.com

Introduction to STB30NF20L

The STB30NF20L is a power MOSFET that can be used in a wide range of applications. It provides a high degree of flexibility with its ability to switch rapidly and combine low on-resistance with high current capability. In addition, it features a built-in PWM input and integrated protection features, making it suitable for a variety of industries.

Application Field of STB30NF20L

The STB30NF20L is an ideal device for applications such as Power Management, Motor Control, and Power Electronics. It can be used in a variety of industrial and consumer applications such as air-conditioners, washing machines, Uninterruptible Power Supplies (UPS), and many other applications. As a motor control device, the STB30NF20L can be used in electric wheelchairs, battery powered electric tools, and other motor driven applications. The device can also be used in switching power supplies, providing superior performance and efficiency. Additionally, its ability to switch rapidly, reduce EMI/RFI, and provide a stable and robust system make it an ideal choice for power management.

Working Principle of STB30NF20L

The STB30NF20L is a power MOSFET that is based on an insulated gate technology. This type of FET is often referred to as an Insulated Gate Bipolar Transistor (IGBT). It operates by controlling the voltage between two gate-source terminals. The voltage difference between the gate and source terminals creates an electric field that controls the flow of electrons and holes through the base. The device operates in two distinct modes: linear mode and saturation mode. In linear mode, the gate voltage is used to create a linear relationship between current and gate voltage, while in saturation mode, the device becomes saturated and restricts the voltage gain to a specific level. The device also features a low gate capacitance, allowing it to switch quickly, and a high-current carrying capacity.

Conclusion

The STB30NF20L is a power MOSFET that is an ideal device for a variety of industrial and consumer applications. It features a built-in PWM input and integrated protection features, and its low gate capacitance and high current carrying capacity make it an ideal choice for switching power supplies and motor control applications. It is based on insulated gate technology and operates in two distinct modes: linear mode and saturation mode. Overall, the STB30NF20L is a robust, reliable, and powerful device for a host of applications. With its excellent performance and reliability, the STB30NF20L is the perfect choice for today\'s demanding applications.

The specific data is subject to PDF, and the above content is for reference

Part Number	Manufacturer	Price	Quantity	Description