Allicdata Part #: | STB3NK60ZT4-ND |
Manufacturer Part#: |
STB3NK60ZT4 |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | STMicroelectronics |
Short Description: | MOSFET N-CH 600V 2.4A D2PAK |
More Detail: | N-Channel 600V 2.4A (Tc) 45W (Tc) Surface Mount D2... |
DataSheet: | STB3NK60ZT4 Datasheet/PDF |
Quantity: | 1000 |
Vgs(th) (Max) @ Id: | 4.5V @ 50µA |
Package / Case: | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
Supplier Device Package: | D2PAK |
Mounting Type: | Surface Mount |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Power Dissipation (Max): | 45W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 311pF @ 25V |
Vgs (Max): | ±30V |
Gate Charge (Qg) (Max) @ Vgs: | 11.8nC @ 10V |
Series: | SuperMESH™ |
Rds On (Max) @ Id, Vgs: | 3.6 Ohm @ 1.2A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 10V |
Current - Continuous Drain (Id) @ 25°C: | 2.4A (Tc) |
Drain to Source Voltage (Vdss): | 600V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Not For New Designs |
Packaging: | Tape & Reel (TR) |
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The STB3NK60ZT4 is a N-channel, breakdown voltage-enhanced, power MOSFET designed to operate in the medium voltage (up to 500 V) and medium power range (up to 370 W). It can handle up to 8-A of continuous drain current. The device offers improved switching performance in higher voltage and power applications.The STB3NK60ZT4 is a four-terminal device that contains two N-channel MOSFETs and two P-channel MOSFETs integrated into a single package. It has two drain terminals, two source terminals, and two gate terminals. The two N-channel MOSFETs are connected in parallel, and the two P-channel MOSFETs are connected in parallel as well.The STB3NK60ZT4 is designed to be used in a variety of applications such as motor control, DC/DC converters, lighting control, and power factor correction. This device is especially suitable for switching power conversion applications, as it can be used with either high voltage or low voltage switching power supplies.In a typical application, the STB3NK60ZT4 is used to switch a controllable current between two different voltages. The gate of the device is connected to the low-voltage side of the system, and the two source terminals are connected in parallel to the high-voltage side. The two drain terminals are connected to the loads. As the gate voltage of the STB3NK60ZT4 increases, its internal resistance decreases, allowing a greater current to flow between the high-voltage and low-voltage sides. When the gate voltage decreases, the internal resistance of the device increases, thus reducing the flow of the current between the two sides.The STB3NK60ZT4 can also be used as an on-off switch in applications that require a fast and reliable turn-off response. In this case, the gate of the device is connected to the low-voltage side of the system and the two source terminals are connected in series. The two drain terminals are connected in parallel to the load. When the gate voltage of the STB3NK60ZT4 decreases, its internal resistance increases, thus turning off the current being switched.In addition, the STB3NK60ZT4 is also suitable for use in high-frequency switching applications. This is due to its low switching losses and fast turn-off response. The device is capable of operating in frequencies up to 1 MHz.The STB3NK60ZT4 is a versatile and highly efficient device for controlling a current between two different voltages or as a switch in high-frequency switching applications. It is designed to operate in the medium voltage range with high power efficiency, fast speed, and reliable turn-off response. The device can be used in a variety of applications and offers improved switching performance compared to other similar devices.
The specific data is subject to PDF, and the above content is for reference
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