STB34NM60ND Allicdata Electronics
Allicdata Part #:

497-12237-2-ND

Manufacturer Part#:

STB34NM60ND

Price: $ 3.82
Product Category:

Discrete Semiconductor Products

Manufacturer: STMicroelectronics
Short Description: MOSFET N-CH 600V 29A D2PAK
More Detail: N-Channel 600V 29A (Tc) 190W (Tc) Surface Mount D2...
DataSheet: STB34NM60ND datasheetSTB34NM60ND Datasheet/PDF
Quantity: 1000
1000 +: $ 3.47217
Stock 1000Can Ship Immediately
$ 3.82
Specifications
Vgs(th) (Max) @ Id: 5V @ 250µA
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Supplier Device Package: D2PAK
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Power Dissipation (Max): 190W (Tc)
FET Feature: --
Input Capacitance (Ciss) (Max) @ Vds: 2785pF @ 50V
Vgs (Max): ±25V
Gate Charge (Qg) (Max) @ Vgs: 80.4nC @ 10V
Series: FDmesh™ II
Rds On (Max) @ Id, Vgs: 110 mOhm @ 14.5A, 10V
Drive Voltage (Max Rds On, Min Rds On): 10V
Current - Continuous Drain (Id) @ 25°C: 29A (Tc)
Drain to Source Voltage (Vdss): 600V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Tape & Reel (TR) 
Description

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STB34NM60ND is a type of n-channel power MOSFET that has been optimized for a variety of application fields and working principles. It is one of the most widely used MOSFETs in power management and high frequency switching devices. It has a very high current-carrying capacity, low on-state resistance and excellent switching characteristics. It also has a very low gate-source voltage (VGS) threshold and a low gate charge. This makes it ideal for applications where high power density, low power losses and fast switching times are required.

One of the primary application fields of the STB34NM60ND is in high-frequency switching power supplies. It can be used in switching power supplies to drive high-frequency signals that can be changed quickly with minimal power losses. Additionally, it can be used in high-efficiency power converters and DC-DC converters as it has a very low gate-source voltage (VGS) threshold that enables low-power switching of high frequencies. This makes it suitable for high-frequency applications such as those in the computer and electronics industries.

In addition to high-frequency switching, the STB34NM60ND can also be used in motor control applications. Its low on-state resistance makes it ideal for controlling motors as it is able to deliver a high amount of power without significant increases in power losses. This makes it suitable for applications in automotive, industrial and military motor control systems.

The STB34NM60ND has a very efficient working principle. It operates by utilizing both the channel and the body effect to control the current flow through the transistor channel between the drain and the source. In order to turn on the transistor, the gate voltage (VGS) must be set to a level that allows current to flow through the channel. When the gate voltage increases, the current flow through the transistor is increased as well. This is done by increasing the amount of charge carriers in the channel, which increases conductivity.

The STB34NM60ND has been designed to be used in a variety of applications such as automotive, industrial and military motor control systems, high-frequency switching power supplies and high-efficiency power converters. It is an ideal choice for applications where high power density, low power losses and fast switching times are needed. With its low gate-source voltage (VGS) threshold and low on-state resistance, it is an excellent choice for applications with high-frequency switching and efficient motor control.

The specific data is subject to PDF, and the above content is for reference

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