| Allicdata Part #: | 497-8474-2-ND |
| Manufacturer Part#: |
STB30NM60N |
| Price: | $ 0.00 |
| Product Category: | Discrete Semiconductor Products |
| Manufacturer: | STMicroelectronics |
| Short Description: | MOSFET N-CH 600V 25A D2PAK |
| More Detail: | N-Channel 600V 25A (Tc) 190W (Tc) Surface Mount D2... |
| DataSheet: |  STB30NM60N Datasheet/PDF |
| Quantity: | 1000 |
| 1 +: | 0.00000 |
| Vgs(th) (Max) @ Id: | 4V @ 250µA |
| Package / Case: | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
| Supplier Device Package: | D2PAK |
| Mounting Type: | Surface Mount |
| Operating Temperature: | 150°C (TJ) |
| Power Dissipation (Max): | 190W (Tc) |
| FET Feature: | -- |
| Input Capacitance (Ciss) (Max) @ Vds: | 2700pF @ 50V |
| Vgs (Max): | ±30V |
| Gate Charge (Qg) (Max) @ Vgs: | 91nC @ 10V |
| Series: | MDmesh™ II |
| Rds On (Max) @ Id, Vgs: | 130 mOhm @ 12.5A, 10V |
| Drive Voltage (Max Rds On, Min Rds On): | 10V |
| Current - Continuous Drain (Id) @ 25°C: | 25A (Tc) |
| Drain to Source Voltage (Vdss): | 600V |
| Technology: | MOSFET (Metal Oxide) |
| FET Type: | N-Channel |
| Part Status: | Obsolete |
| Packaging: | Tape & Reel (TR) |
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The STB30NM60N is a N-channel MOSFET transistor having low on-resistance and low gate charge, and is designed to work in different electronic applications. This device is part of the STB30NM60N series of power MOSFETs, which comprise over 100 transistors, making them to be one of the most advanced and extensive devices of their kind. In this article, we will examine the application field and working principle of this device in more detail.
The STB30NM60N and its family is suitable for use in high current, high efficiency and low power applications. It can be used in various applications such as voltage regulators, power converters and current limits. It is ideal for applications that require high performance and high switching frequency with low losses, such as critical motor drive circuits, high frequency converters and solar micro-inverters.
The STB30NM60N is a single N-channel MOSFET with a drain-source voltage of 600V and a drain current of 30A. It has a low on-resistance of 0.52
The specific data is subject to PDF, and the above content is for reference
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