| Allicdata Part #: | 497-16357-2-ND |
| Manufacturer Part#: |
STB35N60DM2 |
| Price: | $ 1.94 |
| Product Category: | Discrete Semiconductor Products |
| Manufacturer: | STMicroelectronics |
| Short Description: | MOSFET N-CH 600V 28A |
| More Detail: | N-Channel 600V 28A (Tc) 210W (Tc) Surface Mount D2... |
| DataSheet: |  STB35N60DM2 Datasheet/PDF |
| Quantity: | 1000 |
| 1 +: | $ 1.94000 |
| 10 +: | $ 1.88180 |
| 100 +: | $ 1.84300 |
| 1000 +: | $ 1.80420 |
| 10000 +: | $ 1.74600 |
| Vgs(th) (Max) @ Id: | 5V @ 250µA |
| Package / Case: | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
| Supplier Device Package: | D2PAK |
| Mounting Type: | Surface Mount |
| Operating Temperature: | -55°C ~ 150°C (TJ) |
| Power Dissipation (Max): | 210W (Tc) |
| FET Feature: | -- |
| Input Capacitance (Ciss) (Max) @ Vds: | 2400pF @ 100V |
| Vgs (Max): | ±25V |
| Gate Charge (Qg) (Max) @ Vgs: | 54nC @ 10V |
| Series: | MDmesh™ DM2 |
| Rds On (Max) @ Id, Vgs: | 110 mOhm @ 14A, 10V |
| Drive Voltage (Max Rds On, Min Rds On): | 10V |
| Current - Continuous Drain (Id) @ 25°C: | 28A (Tc) |
| Drain to Source Voltage (Vdss): | 600V |
| Technology: | MOSFET (Metal Oxide) |
| FET Type: | N-Channel |
| Part Status: | Active |
| Packaging: | Tape & Reel (TR) |
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STB35N60DM2 application field and working principle
The STB35N60DM2 is a N-channel MOSFET that is widely used in power switches applications. It is known for its excellent low on-resistance for high current and efficiency applications. Its maximum drain-source voltage is 600 V and its maximum drain-source on-state resistance is 35mΩ. This combination of high voltage and low on-resistance makes it a desirable choice to use in power switch applications.
The STB35N60DM2 is a single N-channel MOSFET with a vertical DMOS structure. This type of MOSFET offers several advantages such as better gate-drive capability, improved thermal performance, and lower conduction losses. This makes it suitable for higher voltage and amperage applications. The die compliment in the STB35N60DM2 is based on a vertical DMOS structure.
MOSFETs are switches that are driven by voltage into either an on or off position. When a MOSFET is in the off position, it acts like an open circuit and does not conduct any current. When it is in the on position, it acts like a closed circuit and conducts current. The amount of current it can conduct is known as the Drain-Source current. This is based on the on-resistance of the MOSFET, which refers to the resistance between the drain and source pins while the MOSFET is in the on position.
When the STB35N60DM2 is in the off position, the gate is held at a high voltage, usually between 8V and 8.6V. The gate is usually connected to a source of either +V or ground, depending on the application. When the voltage on the gate is increased beyond the threshold voltage, which for the STB35N60DM2 is 4V, the MOSFET turns on. When the MOSFET is on, a voltage differential between the source and drain is created. This voltage differential allows current to flow between the two pins.
The STB35N60DM2 is an ideal choice for power switch applications because of its excellent low on-resistance, high voltage rating, and good thermal performance. The STB35N60DM2 is commonly used in power supplies, DC-DC converters, inverters, and other high current applications. This makes it a valuable component for developing robust and efficient power systems.
The specific data is subject to PDF, and the above content is for reference
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