STB32NM50N

Vgs(th) (Max) @ Id:	4V @ 250µA
Package / Case:	TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Supplier Device Package:	TO-263 (D²Pak)
Mounting Type:	Surface Mount
Operating Temperature:	150°C (TJ)
Power Dissipation (Max):	190W (Tc)
FET Feature:	--
Input Capacitance (Ciss) (Max) @ Vds:	1973pF @ 50V
Vgs (Max):	±25V
Gate Charge (Qg) (Max) @ Vgs:	62.5nC @ 10V
Series:	MDmesh™ II
Rds On (Max) @ Id, Vgs:	130 mOhm @ 11A, 10V
Drive Voltage (Max Rds On, Min Rds On):	10V
Current - Continuous Drain (Id) @ 25°C:	22A (Tc)
Drain to Source Voltage (Vdss):	500V
Technology:	MOSFET (Metal Oxide)
FET Type:	N-Channel
Part Status:	Active
Packaging:	Tape & Reel (TR)

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The STB32NM50N is a low voltage N-channel MOSFET with a drain-source voltage rating of 500V, a maximum drain current of 32A and a typical maximum on-state resistance of 2.8mΩ. This circuit component is commonly used for various applications, such as in ELV, LED Driver and battery management circuits, offering excellent temperature stability and fast switching performance. It is ideal for motor control, switching power supplies and protection circuits, and allows for up to 75% higher current density compared to single N-channel MOSFETs.Working PrincipleMOSFETs work on the principle of field-effect transistors (FETs). In FETs, the input signal (gate voltage) controls the current flow from the source terminal (drain voltage) to the drain terminal (source voltage). As the voltage applied to the gate increases, the "gate width" increases and the source-drain current increases. The source-drain current dependence is typically described by the Channel Length Modulation (CLM) relationship. CLM is affected by the channel length, channel width and gate oxide thickness.When using a MOSFET as a switch, it is important to determine if the MOSFET is in either the cut-off or enhancement modes. In the cut-off mode, the MOSFET is off and no current flows. It is in the cut-off mode when the gate voltage (VGS) is below the threshold voltage (Vth). In contrast, the enhancement mode is activated when the gate voltage is above the threshold voltage. As the gate voltage increases above the threshold voltage, the amount of current flowing from the source to the drain increases.The key to successful MOSFET operation is to ensure that the voltage applied to the gate is kept below the absolute maximum rating (VMAX).STB32NM50N Application FieldThe STB32NM50N is a low voltage MOSFET that offers excellent temperature stability and fast switching performance. It is primarily used in ELV, LED Driver and battery management circuits, offering up to 75% higher current density compared to single N-channel MOSFETs.The STB32NM50N is also suitable for motor control, switching power supplies and protection circuits, and is designed to operate in harsh conditions. It features a maximum drain-source voltage rating of 500V and a maximum drain current of 32A, with a typical maximum on-state resistance of 2.8mΩ.The STB32NM50N is an ideal choice for applications that require high-speed switching and low on-state resistance. Its low voltage and fast switching allow for efficient operation in a wide range of environments and conditions.ConclusionThe STB32NM50N is a low voltage N-channel MOSFET with a drain-source voltage rating of 500V and a maximum drain current of 32A. It is primarily used in ELV, LED Driver and battery management circuits, offering up to 75% higher current density compared to single N-channel MOSFETs. The STB32NM50N also works well in motor control, switching power supplies and protection circuits, and is designed to operate in harsh conditions. Its low voltage and fast switching provide excellent temperature stability and efficient operation in a wide range of environments.

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