STB38N65M5

Vgs(th) (Max) @ Id:	5V @ 250µA
Package / Case:	TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Supplier Device Package:	D2PAK
Mounting Type:	Surface Mount
Operating Temperature:	150°C (TJ)
Power Dissipation (Max):	190W (Tc)
FET Feature:	--
Input Capacitance (Ciss) (Max) @ Vds:	3000pF @ 100V
Vgs (Max):	±25V
Gate Charge (Qg) (Max) @ Vgs:	71nC @ 10V
Series:	MDmesh™ V
Rds On (Max) @ Id, Vgs:	95 mOhm @ 15A, 10V
Drive Voltage (Max Rds On, Min Rds On):	10V
Current - Continuous Drain (Id) @ 25°C:	30A (Tc)
Drain to Source Voltage (Vdss):	650V
Technology:	MOSFET (Metal Oxide)
FET Type:	N-Channel
Part Status:	Active
Packaging:	Tape & Reel (TR)

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The STB38N65M5 is a N-channel enhanced mode MOSFET (metal oxide semiconductor field-effect transistor). It is designed to be used as a power switch for high performance and improved efficiency in a wide range of applications.The STB38N65M5 is constructed using super-junction technology, which is an advanced process technology that integrates both vertical and lateral flow of current through the device. This combination of vertical and lateral flow creates a unique structure that maximizes the on and off currents and minimizes the amount of power lost through conduction loss and on-resistance. The result is a power switch with greater efficiency, improved performance and higher speed than traditional metal-oxide field-effect transistors.The STB38N65M5 is designed to handle higher input voltages than other traditional MOSFETs, up to 650 volts. It has a high control input impedance, typically up to 500 Ohms, and can handle larger drain-to-source currents, typically up to 650 Amperes. It is also designed to operate over a wide range of temperature, typically up to 150 degrees Celsius.The STB38N65M5 is designed to be used as a power controller in power conversion systems, such as dc-to-dc converters, step-down regulators, voltage multipliers, power factor correction circuits and motor servo control. It is also well suited for high-current applications such as lighting controllers, motor drive systems, motor commutators and battery management systems.The working principle of the STB38N65M5 is based on the typical operation of MOSFET transistors. A small voltage applied to the gate terminal (G) controls the amount of current that is allowed to flow between the drain and source terminals (D and S). The amount of current flowing is proportional to the voltage applied to the gate terminal. This principle is known as voltage-controlled current supply.When the gate voltage is low, the amount of current that can flow between the drain and source terminals is also low. As the gate voltage is increased, more current is allowed to flow between the drain and source terminals. When the gate voltage is very high, the transistor is almost fully turned on and maximum current flows between the drain and source terminals.The STB38N65M5 is designed with an internal diode that limits the voltage between the drain and source terminals, preventing the transistor from becoming too hot or entering a breakdown.The STB38N65M5 is designed to be used in a wide range of applications, from power converters to motor control applications. It provides excellent performance, higher throughput, improved efficiency and better in-rush protection than conventional MOSFETs.

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