STB30NF10T4 Allicdata Electronics
Allicdata Part #:

497-6550-2-ND

Manufacturer Part#:

STB30NF10T4

Price: $ 0.63
Product Category:

Discrete Semiconductor Products

Manufacturer: STMicroelectronics
Short Description: MOSFET N-CH 100V 35A D2PAK
More Detail: N-Channel 100V 35A (Tc) 115W (Tc) Surface Mount D2...
DataSheet: STB30NF10T4 datasheetSTB30NF10T4 Datasheet/PDF
Quantity: 1000
1 +: $ 0.63000
10 +: $ 0.61110
100 +: $ 0.59850
1000 +: $ 0.58590
10000 +: $ 0.56700
Stock 1000Can Ship Immediately
$ 0.63
Specifications
Vgs(th) (Max) @ Id: 4V @ 250µA
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Supplier Device Package: D2PAK
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Power Dissipation (Max): 115W (Tc)
FET Feature: --
Input Capacitance (Ciss) (Max) @ Vds: 1180pF @ 25V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 55nC @ 10V
Series: STripFET™ II
Rds On (Max) @ Id, Vgs: 45 mOhm @ 15A, 10V
Drive Voltage (Max Rds On, Min Rds On): 10V
Current - Continuous Drain (Id) @ 25°C: 35A (Tc)
Drain to Source Voltage (Vdss): 100V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Tape & Reel (TR) 
Description

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The STB30NF10T4, a type of field-effect transistor (FET), is one of the latest and most advanced transistors available in the market. It is a single N-channel FET with a super-small package size, making it suitable for both low power and high power applications. It is typically used in automotive systems, consumer electronics, telecoms networks, and industrial applications.

The STB30NF10T4 transistor is N-channel FET and is composed of an insulated-gate. FETs are components that can be used as digitally-controlled variable resistors, and these transistors typically feature voltage-controlled operation, high input-impedance, small size and low power consumption. These types of transistors can be used to amplify or switch electrical signals in digital circuits.

The device features a process technology that enhances switching speed, increases junction temperature capability, and reduces power consumption. The device also features a low on-resistance of just 30mΩ and provides a high level of off-state ESD (Electro-Static Discharge) protection, making it suitable for use in a wide range of applications.

The unique feature of the STB30NF10T4 is its ability to turn off completely when its gate voltage is below a certain threshold. This is known as the "zero gate voltage" feature and is an important attribute for noise reduction in audio applications. In addition, the power losses associated with this transistor are minimal compared to other transistors, making it an ideal choice for powering low-power and low-voltage circuits.

The STB30NF10T4 transistor features a very wide working range and can operate at over a thousand volts. In addition, the power dissipation levels are extremely low as the total thermal dissipation is only 0.22 watts. This makes the device suitable for applications where power savings and energy efficiency are important.

The working principle of the STB30NF10T4 is based on the basic principle of field-effect transistors. When a gate voltage is applied to the device, the current through its drain is modulated by the gate-to-source voltage. The current through the drain is then amplified in the same way as it would be in a linear amplifier, resulting in a highly efficient amplification of the signal.

In summary, the STB30NF10T4 is a type of field-effect transistor with a super-small package size, a low on-resistance, and a wide working range. It is well-suited for applications that require low power and energy efficiency, such as automotive systems, consumer electronics, telecoms networks, and industrial applications. Furthermore, its zero gate voltage feature is useful for audio applications, while its low power dissipation levels make it ideal for powering low-power and low-voltage circuits.

The specific data is subject to PDF, and the above content is for reference

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