STB34NM60N

Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us:   sales@allicdata.com

STB34NM60N is a high voltage device belonging to the family of N channel power metal-oxide-semiconductor field-effect transistors (MOSFETs). These MOSFETs are mostly used in motor control applications and are known for their compatibility with higher switching frequencies and higher power densities due to their advanced design and reduced on-resistance values.

The STB34NM60N are available in TO-220 packages. The HEXFET® power MOSFETs have a wide range of applications. They can be used in applications that require precise control of power elements, such as switching power supplies, motor control and lighting systems. They also find their use in automotive, industrial and consumer applications as well.

The STB34NM60N has total gate charge (Qg) of 19.0nC and maximum drain-source on-resistance (Rds) of 0.0048 Ω. It can operate at a maximum drain-source voltage (Vds) of 600 V. The device also features dv/dt of 1500V/ns and can sustain avalanche energy (Eas) of 110mJ. It has beyond-rating avalanche energy with no thermal runaway due to its high-performance HexFET technology. The device also operates with a maximum source-drain current (Id) of 66 A and with a maximum power dissipation (Pd) of 140 W at Tc=25°C. Moreover, it can work with a single P channel MOSFET body-diode.

STB34NM60N is made up of an insulated-gate field-effect transistor (IGFET) which is constructed with a channel of n-type silicon. The channel is sandwiched between two spaced-apart insulated-gate electrodes which also provide a direct connection to the body. An IGFET by itself has a very high input impedance and conductivity, making them ideal for use in power applications. The insulated gate electrodes provide the gate-source voltage (Vgs) to drive the device into saturation, so that the drain-source current flows.

The STB34NM60N can be used in various motor control applications due to its low On-resistance, high frequency operation capabilities, and its capability to work with a single P channel MOSFET body-diode, as mentioned before. It can also be used in switching power supplies, lighting systems, automotive, industrial, and consumer applications.

In conclusion, the STB34NM60N offers low gate charge, low gate and body charge, high dv/dt capability, and Avalanche Energy ratings ideal for automotive, medical, commercial and industrial applications including motor control, switching power supplies, and lighting systems.

The specific data is subject to PDF, and the above content is for reference