STB33N65M2 Allicdata Electronics
Allicdata Part #:

497-15457-2-ND

Manufacturer Part#:

STB33N65M2

Price: $ 1.23
Product Category:

Discrete Semiconductor Products

Manufacturer: STMicroelectronics
Short Description: MOSFET N-CH 650V 24A D2PAK
More Detail: N-Channel 650V 24A (Tc) 190W (Tc) Surface Mount D2...
DataSheet: STB33N65M2 datasheetSTB33N65M2 Datasheet/PDF
Quantity: 1000
1 +: $ 1.23000
10 +: $ 1.19310
100 +: $ 1.16850
1000 +: $ 1.14390
10000 +: $ 1.10700
Stock 1000Can Ship Immediately
$ 1.23
Specifications
Vgs(th) (Max) @ Id: 4V @ 250µA
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Supplier Device Package: D2PAK
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Power Dissipation (Max): 190W (Tc)
FET Feature: --
Input Capacitance (Ciss) (Max) @ Vds: 1790pF @ 100V
Vgs (Max): ±25V
Gate Charge (Qg) (Max) @ Vgs: 41.5nC @ 10V
Series: MDmesh™ M2
Rds On (Max) @ Id, Vgs: 140 mOhm @ 12A, 10V
Drive Voltage (Max Rds On, Min Rds On): 10V
Current - Continuous Drain (Id) @ 25°C: 24A (Tc)
Drain to Source Voltage (Vdss): 650V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Tape & Reel (TR) 
Description

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The STB33N65M2 is a low-voltage N-Channel MOSFET. This power transistor is part of the STB33N65M2 series, which includes several members with enhanced ratings in order to meet the needs of various application areas. All of these components feature an I/O drive current of 1.5A and very low on-state losses. This component is especially suitable for applications where current flow must be remotely controlled.

The STB33N65M2 belongs to the family of Ensonic and Genesic power transistors, a family of devices that combine High-Speed switching, low gate charge and high efficiency, and are suitable for high performance applications which require that the switching conditions are controlled. They also provide excellent ruggedness and very low on-state resistance values, making them suitable for a wide range of applications such as motor control, power conversion and automotive.

This component can operate at a maximum voltage of 500V (DC). The drain-source voltage is given as a Vgs, which means that the voltage across the drain-source terminals is equal to the gate-source voltage. The drain-source current is equal to the ID rating given in the datasheet. The component also features a low gate charge, low total gate charge and low total output capacitance. All these features make it suitable for high frequency applications.

The STB33N65M2 has its working principle based upon the physics of the transistor, FET or MOSFET. When a voltage is applied to the Gate, it creates an electric field which modulates the flow of current between the Drain and the Source. This works much like a switch, where an applied voltage between the Gate and the Source will turn the device "on", while a voltage between the Drain and the Source will turn the device "off". This property is used in designs to create circuits where current can be remotely controlled.

The STB33N65M2 is mainly used in broadband amplifier and power supply applications, where it can be used to control the output signal level. This component can also be used as a switch, to control the power supply of a network device, or to control the speed of a motor. Other applications include high speed switching, voltage regulation, and over-voltage protection.

In conclusion, the STB33N65M2 is a low-voltage N-channel MOSFET that offers excellent performance for a wide range of applications, such as broadband amplifiers, power supplies, motor control, voltage regulation and over-voltage protection. It has a simple working principle based upon the physics of the transistor and can easily be used to control current flow remotely. This makes it an excellent choice for high-performance applications.

The specific data is subject to PDF, and the above content is for reference

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