STB30NM60ND

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STB30NM60ND is a 600V power MOSFET from ON Semiconductor’s Power Transistor series. It is one of the most popular and widely used MOSFETs due to its numerous features and applications.

The STB30NM60ND is a N-Channel Enhancement Mode MOSFET which uses the company’s MDmesh™ Advanced Power MOSFET technology. It is available in the three-terminal TO-220AB package, and it has a drain-source voltage rating of up to 600V, a maximum drain current of 30A, and a drain-source on-resistance rating of 0.014Ω. It also features a gate-source voltage rating of +/-20V and an internal gate-source capacitance of 6.1 pF.

The STB30NM60ND has a wide variety of applications. These include motor control, AC/DC and DC/DC converters, DC/AC inverters and audio amplifiers. It can be used to build power stages in flyback converter circuits and in HB and HBL converters. It is also used in hybrid and full bridge circuits, and in switch-mode power supplies.

The working principle of the STB30NM60ND is based on the characteristics of a MOSFET. A MOSFET is a transistor that is composed of two channels: a source (S) and a drain (D). When a Gate-Source Voltage (VGS) is applied, it forms an electric field which modulates the conductivity of the device, allowing electrons to flow between the source and the drain.

A voltage applied across the drain-source is used to control the on and off states of the MOSFET. When the voltage is turned on, it creates a channel between the Source and Drain and electrons flow through it. This allows the current to flow between the Source and Drain, thus turning on the device. When the voltage is turned off, the electric field disappears, and the channel is blocked, thus turning off the device.

When the STB30NM60ND is used as a switching device, it can control the power delivered to a load by rapidly turning off and on, thus controlling the amount of power delivered to the load. This makes the device ideal for applications where current has to be switched rapidly, such as motor control and DC/DC converters.

The STB30NM60ND is an excellent example of a modern power MOSFET and provides a versatile solution to a broad range of applications. Its numerous advantages, such as its low on-resistance, its high drain-source voltage rating, and its wide range of applications, make it one of the most popular and widely used MOSFETs available.

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