STB36NM60N Allicdata Electronics
Allicdata Part #:

497-12972-2-ND

Manufacturer Part#:

STB36NM60N

Price: $ 5.34
Product Category:

Discrete Semiconductor Products

Manufacturer: STMicroelectronics
Short Description: MOSFET N-CH 600V 29A D2PAK
More Detail: N-Channel 600V 29A (Tc) 210W (Tc) Surface Mount D2...
DataSheet: STB36NM60N datasheetSTB36NM60N Datasheet/PDF
Quantity: 1000
1000 +: $ 4.85647
Stock 1000Can Ship Immediately
$ 5.34
Specifications
Vgs(th) (Max) @ Id: 4V @ 250µA
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Supplier Device Package: D2PAK
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Power Dissipation (Max): 210W (Tc)
FET Feature: --
Input Capacitance (Ciss) (Max) @ Vds: 2722pF @ 100V
Vgs (Max): ±25V
Gate Charge (Qg) (Max) @ Vgs: 83.6nC @ 10V
Series: Automotive, AEC-Q101, MDmesh™ II
Rds On (Max) @ Id, Vgs: 105 mOhm @ 14.5A, 10V
Drive Voltage (Max Rds On, Min Rds On): 10V
Current - Continuous Drain (Id) @ 25°C: 29A (Tc)
Drain to Source Voltage (Vdss): 600V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Tape & Reel (TR) 
Description

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STB36NM60N is an N-channel Enhancement Mode MOSFET (metal-oxide-semiconductor field-effect transistor) capable of controlling high power and current circuits. This type of MOSFETs are widely used in various electronic applications as it has low conduction and switching losses. It can be used for multiple purposes like switching loads in motor drives, relay switching, and DC-AC converters. It also has an excellent temperature and power stability with high power and current ratings.

The STB36NM60N is a single-phase model, which means it only needs one single power rail to operate and provides the same output power without any losses in efficiency. It is a 600V device with a low on-state resistance (RDSon) of 0.3 ohms, which helps reduce power losses in the switching circuits. Moreover, this MOSFET also has a relatively low input capacitance and high speed properties, making it ideal for high switching frequency applications.

The STB36NM60N MOSFET is usually used in motor control and switching applications where high currents and voltages are present. It can be used in appliances, lighting ballasts, automotive and aerospace equipment, electronic control systems and various other electronic circuits. Its fast switching speed, low conduction losses, and low input capacitance make it one of the most reliable and efficient devices for many applications.

The working principle of a MOSFET is based on the "electrostatic coupling" between a gate terminal and the two source and drain terminals. It works as a voltage-controlled device which is used to control the current flow between the drain and the source terminals. Here, a small biasing voltage applied to the gate terminal creates an electric field that modulates the channel between the source and the drain. When the applied voltage is small, the channel is narrow and the device is turned off. But when the biasing voltage increases the channel widens and allows current to flow from the source to the drain. This field-effect of controlling current flow with bias voltage is the basic principle of operation of a MOSFET.

In conclusion, STB36NM60N is a high power and current MOSFET used for various electronic applications. It offers excellent temperature and power stability along with high speed and low input capacitance. This makes it an ideal device for motor controls, switching loads and various other applications. The working principle of the device is based on the capability of controlling current flow between the source and drain terminals using voltage applied to the gate terminal.

The specific data is subject to PDF, and the above content is for reference

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