Allicdata Part #: | 497-12972-2-ND |
Manufacturer Part#: |
STB36NM60N |
Price: | $ 5.34 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | STMicroelectronics |
Short Description: | MOSFET N-CH 600V 29A D2PAK |
More Detail: | N-Channel 600V 29A (Tc) 210W (Tc) Surface Mount D2... |
DataSheet: | STB36NM60N Datasheet/PDF |
Quantity: | 1000 |
1000 +: | $ 4.85647 |
Vgs(th) (Max) @ Id: | 4V @ 250µA |
Package / Case: | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
Supplier Device Package: | D2PAK |
Mounting Type: | Surface Mount |
Operating Temperature: | 150°C (TJ) |
Power Dissipation (Max): | 210W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 2722pF @ 100V |
Vgs (Max): | ±25V |
Gate Charge (Qg) (Max) @ Vgs: | 83.6nC @ 10V |
Series: | Automotive, AEC-Q101, MDmesh™ II |
Rds On (Max) @ Id, Vgs: | 105 mOhm @ 14.5A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 10V |
Current - Continuous Drain (Id) @ 25°C: | 29A (Tc) |
Drain to Source Voltage (Vdss): | 600V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Active |
Packaging: | Tape & Reel (TR) |
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STB36NM60N is an N-channel Enhancement Mode MOSFET (metal-oxide-semiconductor field-effect transistor) capable of controlling high power and current circuits. This type of MOSFETs are widely used in various electronic applications as it has low conduction and switching losses. It can be used for multiple purposes like switching loads in motor drives, relay switching, and DC-AC converters. It also has an excellent temperature and power stability with high power and current ratings.
The STB36NM60N is a single-phase model, which means it only needs one single power rail to operate and provides the same output power without any losses in efficiency. It is a 600V device with a low on-state resistance (RDSon) of 0.3 ohms, which helps reduce power losses in the switching circuits. Moreover, this MOSFET also has a relatively low input capacitance and high speed properties, making it ideal for high switching frequency applications.
The STB36NM60N MOSFET is usually used in motor control and switching applications where high currents and voltages are present. It can be used in appliances, lighting ballasts, automotive and aerospace equipment, electronic control systems and various other electronic circuits. Its fast switching speed, low conduction losses, and low input capacitance make it one of the most reliable and efficient devices for many applications.
The working principle of a MOSFET is based on the "electrostatic coupling" between a gate terminal and the two source and drain terminals. It works as a voltage-controlled device which is used to control the current flow between the drain and the source terminals. Here, a small biasing voltage applied to the gate terminal creates an electric field that modulates the channel between the source and the drain. When the applied voltage is small, the channel is narrow and the device is turned off. But when the biasing voltage increases the channel widens and allows current to flow from the source to the drain. This field-effect of controlling current flow with bias voltage is the basic principle of operation of a MOSFET.
In conclusion, STB36NM60N is a high power and current MOSFET used for various electronic applications. It offers excellent temperature and power stability along with high speed and low input capacitance. This makes it an ideal device for motor controls, switching loads and various other applications. The working principle of the device is based on the capability of controlling current flow between the source and drain terminals using voltage applied to the gate terminal.
The specific data is subject to PDF, and the above content is for reference
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