| Allicdata Part #: | 497-16354-2-ND |
| Manufacturer Part#: |
STB33N60DM2 |
| Price: | $ 1.59 |
| Product Category: | Discrete Semiconductor Products |
| Manufacturer: | STMicroelectronics |
| Short Description: | MOSFET N-CH 600V 24A |
| More Detail: | N-Channel 600V 24A (Tc) 190W (Tc) Surface Mount D2... |
| DataSheet: | STB33N60DM2 Datasheet/PDF |
| Quantity: | 1000 |
| 1 +: | $ 1.59000 |
| 10 +: | $ 1.54230 |
| 100 +: | $ 1.51050 |
| 1000 +: | $ 1.47870 |
| 10000 +: | $ 1.43100 |
| Vgs(th) (Max) @ Id: | 5V @ 250µA |
| Package / Case: | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
| Supplier Device Package: | D2PAK |
| Mounting Type: | Surface Mount |
| Operating Temperature: | -55°C ~ 150°C (TJ) |
| Power Dissipation (Max): | 190W (Tc) |
| FET Feature: | -- |
| Input Capacitance (Ciss) (Max) @ Vds: | 1870pF @ 100V |
| Vgs (Max): | ±25V |
| Gate Charge (Qg) (Max) @ Vgs: | 43nC @ 10V |
| Series: | MDmesh™ DM2 |
| Rds On (Max) @ Id, Vgs: | 130 mOhm @ 12A, 10V |
| Drive Voltage (Max Rds On, Min Rds On): | 10V |
| Current - Continuous Drain (Id) @ 25°C: | 24A (Tc) |
| Drain to Source Voltage (Vdss): | 600V |
| Technology: | MOSFET (Metal Oxide) |
| FET Type: | N-Channel |
| Part Status: | Active |
| Packaging: | Tape & Reel (TR) |
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The STB33N60DM2 is a single N-channel Excessively-Engineered MOSFET (EEMOSFET) from STMicroelectronics. This device is intended for use in any application that requires a low voltage, high current, bidirectional switch. It is capable of switching up to 40V and 40A. The device’s EEMOSFET technology provides superior performance over traditional MOSFETs with higher impedance, lower RDS(on), and lower gate charge.
The STB33N60DM2 is a single N-channel EEMOSFET with a low RDS(on) of 7.4 milliohms. It is capable of switching up to 40V and 40A and is designed for applications where reliability, efficiency, and small size are paramount. With its enhanced thermal characteristics, this device can handle high temperature operation and is well suited for automotive, power control, and other high temperature applications.
The STB33N60DM2 is capable of operating at a relatively low gate voltage, allowing it to be used in low power designs. It has an extremely fast turn-on and switching time with a maximum gate drive current of 6A. The device is designed with built-in protection against over-temperature, over-current, and reverse leakage current.
The STB33N60DM2 is suitable for use in a variety of applications, including automotive, industrial, consumer, and power control. It can be used as an on/off switch in circuits that require a low voltage and high current switch, or as a switch in a motor controller or power supply. Additionally, the device is well-suited for use in DC-DC converters and for switching high power loads.
The working principle behind the STB33N60DM2 is very simple. When a gate voltage is applied, the device will become a closed switch. This will allow current to flow through the N-channel while blocking any reverse current. When the gate voltage is removed, the device will open and the current flow will stop. The device can operate in both AC and DC circuits.
The STB33N60DM2 is a versatile device that can be used in a variety of different applications. Its ability to switch up to 40V and 40A makes it a suitable choice for many power control circuits. Its fast turn-on and switching times make it ideal for applications where speed is critical, and its built-in protection features mean that it can be used in hostile environments.
The specific data is subject to PDF, and the above content is for reference
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STB33N60DM2 Datasheet/PDF