Allicdata Part #: | 497-16105-2-ND |
Manufacturer Part#: |
STB37N60DM2AG |
Price: | $ 1.94 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | STMicroelectronics |
Short Description: | MOSFET N-CH 600V 28A |
More Detail: | N-Channel 600V 28A (Tc) 210W (Tc) Surface Mount D2... |
DataSheet: | STB37N60DM2AG Datasheet/PDF |
Quantity: | 1000 |
1000 +: | $ 1.76387 |
Vgs(th) (Max) @ Id: | 5V @ 250µA |
Package / Case: | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
Supplier Device Package: | D2PAK |
Mounting Type: | Surface Mount |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Power Dissipation (Max): | 210W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 2400pF @ 100V |
Vgs (Max): | ±25V |
Gate Charge (Qg) (Max) @ Vgs: | 54nC @ 10V |
Series: | Automotive, AEC-Q101, MDmesh™ |
Rds On (Max) @ Id, Vgs: | 110 mOhm @ 14A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 10V |
Current - Continuous Drain (Id) @ 25°C: | 28A (Tc) |
Drain to Source Voltage (Vdss): | 600V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Active |
Packaging: | Tape & Reel (TR) |
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The STB37N60DM2AG is a single N-channel field-effect transistor (FET), manufactured by STMicroelectronics. FETs are a type of transistor composed of three regions: the source, gate, and drain. This type of transistor permits the flow of current from the source to the drain when a voltage is applied to the gate. The STB37N60DM2AG is a high-speed power MOSFET, meaning it is designed to switch electrical current quickly. The STB37N60DM2AG can handle up to 37A of drain-source current, has a maximum voltage rating of 600V, and has a total gate charge of around 80nC.
The STB37N60DM2AG is designed for use in a variety of applications requiring high speed switching. It is commonly used in power electronics designs such as switched mode power supply, motor drives, and lighting applications. Furthermore, the wide drain current range and low switching losses enable an efficient power transfer and improved power factor. Because of its small size, the STB37N60DM2AG is a great choice for space-constrained designs.
The working principle of the STB37N60DM2AG is based on the fact that when voltage is applied to the gate, electrons are attracted to the gate, creating a thin conducting channel between the source and drain. This current flow is controlled by the applied gate voltage, and because electrons are relatively mobile within the channel, this type of transistor can switch electrical current very quickly. In addition, the STB37N60DM2AG also has an enhanced temperature durabiltiy due to its specialized packaging: the device is enclosed in an STrip which protects against temperature rises.
In conclusion, the STB37N60DM2AG is a single N-channel FET designed for applications requiring high speed switching. Its wide drain current range and low switching losses enable efficient power transfer and improved power factor. The device is also protected against temperature rises due to its specialized STrip packaging. All in all, the STB37N60DM2AG is a suitable choice for power electronics designs such as switched mode power supply, motor drives, and lighting applications.
The specific data is subject to PDF, and the above content is for reference
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