Allicdata Part #: | 497-10705-2-ND |
Manufacturer Part#: |
STB80N20M5 |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | STMicroelectronics |
Short Description: | MOSFET N-CH 200V 61A D2PAK |
More Detail: | N-Channel 200V 61A (Tc) 190W (Tc) Surface Mount D2... |
DataSheet: | STB80N20M5 Datasheet/PDF |
Quantity: | 1000 |
Vgs(th) (Max) @ Id: | 5V @ 250µA |
Package / Case: | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
Supplier Device Package: | D2PAK |
Mounting Type: | Surface Mount |
Operating Temperature: | 150°C (TJ) |
Power Dissipation (Max): | 190W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 4329pF @ 50V |
Vgs (Max): | ±25V |
Gate Charge (Qg) (Max) @ Vgs: | 104nC @ 10V |
Series: | MDmesh™ V |
Rds On (Max) @ Id, Vgs: | 23 mOhm @ 30.5A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 10V |
Current - Continuous Drain (Id) @ 25°C: | 61A (Tc) |
Drain to Source Voltage (Vdss): | 200V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Active |
Packaging: | Tape & Reel (TR) |
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STB80N20M5 is an N-channel enhancement-mode Field Effect Transistor (FET), which is specially designed for use in general purpose switching applications. It has many advantages including its small size, low off-state leakage currents, fast switching speed and low on-resistance.
The STB80N20M5 is particularly well-suited to switching power FET applications such as DC/DC converters, DC motor control systems, and AC inverter control. It also has a wide range of applications in consumer electronics, including LCD TVs, white goods such as washing machines and dryers, and other consumer products such as portable radios and televisions.
The STB80N20M5 is an enhancement-mode FET, meaning that the gate bias voltage VGS (the voltage difference between the gate and source) must be positive in order for the device to be in its "on" state. When the VGS is in the "on" state, the current carrying channel between the source and drain is created, causing current to flow. As the VGS voltage is increased, more channel is created and a higher current flows. The maximum permitted VGS is -20V, beyond which the device is in danger of being damaged.
The drain current ID is a function of VGS and the drain-source voltage VDS. As the VDS increases, the drain current ID also increases and the device exhibits a linear ohmic behaviour. When the VDS reaches the maximum rated VDS (20V for the STB80N20M5), the drain current ID starts to become limited by the maximum drain current rating. Above this limit, the device is in danger of being damaged and must be taken into account in the design of the circuit.
The STB80N20M5 is a very versatile device and can be used in both low and high side switching applications. In a low side switching application, the gate terminal is connected to the source of the device and the source is connected to the common ground. The drain terminal is then connected to the load. When the gate is driven high, the device is on and current flows from the source to the load. When the gate is driven low, the device is off and current does not flow. This type of application is used for switching devices such as motors where the motor can be controlled by applying the appropriate gate voltage.
In a high side switching application, the gate is connected to the source and the drain is connected to the load, with the source being connected to the highest voltage in the system. The highest voltage can for example be the positive supply voltage or the voltage of the power supply rail. A current limiting device is required in this type of application to protect the FET from being damaged by excessive currents.
The STB80N20M5 is a very useful and versatile device which can be used in a wide variety of applications. It is particularly well-suited to high current applications and is capable of handling currents up to 80A. Its small size and low cost means it is a preferred choice for many applications. Its high switching speed, low on-resistance and low off-state leakage current make it a very attractive device for use in high-power switching and motor control applications.
The specific data is subject to PDF, and the above content is for reference
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