STB85NS04Z

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The STB85NS04Z is a high-performance N-channel MOSFET. It is commonly used in power management applications such as motor control, DC-DC converters, and switching power supplies. Understanding the working principle and application field of this MOSFET can help engineers design better power systems.

Application Fields

The STB85NS04Z is an ideal choice for motor control and DC-DC converters. Its low on-resistance of 8.5 mΩ and low gate charge of 4.9 nC make it an excellent choice when low gate charge and low power losses are required. Its maximum load current is rated at 8A, making it suitable for high current applications. Additionally, the higher VGS(Max) rating of 20V improves the tradeoff between power losses and gate charge. It also has a wide operating temperature range of -55 ℃ to 175 ℃, allowing it to be used in extreme conditions.

The STB85NS04Z is also well suited for switching power supplies. Its high current drive capability and high dV/dt rating make it ideal for high-frequency switching from 5kHz to 300kHz. Its low gate capacitance and high transconductance also ensure fast response time for stable operation and high efficiency. Due to its low gate charge and low on-resistance, it is also well suited for high current applications.

Working Principle

The STB85NS04Z is an N-Channel enhancement mode MOSFET. An enhancement-mode device operates in three regions: cut-off, linear and saturation, as shown in Figure 1. The device is in cut-off mode when the gate-source voltage (VGS) is less than the threshold voltage (VTH). In this region the device is off and the drain current (ID) is zero. When VGS is greater than or equal to VTH the device is in linear mode. In this region the drain current is proportional to the gate source voltage.

Figure 1: Regions of Operation for an Enhancement Mode MOSFET

When VGS is further increased the device enters saturation mode, where the drain current is mainly controlled by the drain-source voltage (VDS). The on-resistance (RDSON) is the resistance of the device when in saturation mode and is an important parameter to consider when selecting a MOSFET. The STB85NS04Z has a low RDSON of 8.5 mΩ, making it ideal for applications where low power losses are desired.

In addition to the three operating regions, the STB85NS04Z also has more features that make it an ideal choice for power management applications. Its high dV/dt rating of 500V/ns and its low gate charge of 4.9 nC make it well suited for high frequency switching applications. It also has a high maximum VGS(Max) rating of 20V. This allows for a better tradeoff between power losses and gate charge.

In summary, the STB85NS04Z is an ideal choice for power management applications such as motor control, DC-DC converters, and switching power supplies. Its low on-resistance of 8.5 mΩ and low gate charge of 4.9 nC make it an excellent choice when low gate charge and low power losses are required. Additionally, its high dV/dt rating and wide operating temperature range make it suitable for high frequency switching applications.

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