STB80NF10T4 Discrete Semiconductor Products

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The STB80NF10T4 is widely used in the field of transistors and FETs, MOSFETs and single transistor applications. This device utilizes the single or multi-channel features of the device to produce better performance in terms of switching speed and power output.

This transistor is also known as an N-channel MOSFET (Metal Oxide Semiconductor Field-Effect Transistor). It is constructed from a substrate that has been doped with n-type (electron-carrying) material. On top of this substrate is the gate region and then the source and drain regions, where a voltage differential is applied. As a result, current can be switched on and off across the source and drain regions.

When the gate voltage, which controls the flow of current through the channel, is applied, the N-channel MOSFET is switched ON. This on-state, which occurs when a positive voltage is applied to the gate, holds until the gate voltage drops below the threshold voltage and the device is switched OFF. This manner of on-off control of the current flow makes the N-channel MOSFET a suitable choice for many applications that require switching of the current.

In addition to the on-off switching capability of the N-channel MOSFET, the STB80NF10T4 also features an inherent low power dissipation characteristic. This characteristic enables the device to be used in applications where power dissipation requirements are limited, such as in battery-powered devices or devices in high-temperature environments. The low power dissipation also makes the device a choice for applications where the power dissipation needs to be minimized, including in low-power designs, or where energy efficiency is key.

The STB80NF10T4 is available in packages that range from 1W to 2W. The device is an ideal choice for low current applications, such as in low power, high speed circuits. It can be used in a variety of switching applications, including logic circuits, analog circuits and high frequency circuits.

In summary, the STB80NF10T4 is an excellent choice for a wide range of applications in the FETs, MOSFETs and single transistor fields. Its low power dissipation and the ability to switch between an on-state and off-state make it an ideal choice for many applications. Its range of packages also makes it a more versatile option when selecting the best MOSFET for your application.

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